cap 6 - amplificadores de estágio único em ci
TRANSCRIPT
26/1/2010
Amplificadores de Estágio Único emCircuitos Integrados
ELT 085 – Circuitos Eletrônicos Analógicos
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2Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Sumário
1. Comparação do MOSFET e BJT
2. Espelhos de Corrente
3. Resposta em Altas Frequências
4. Amplificadores FC e EC com Carga Ativa
5. Amplificadores GC e BC com Carga Ativa
6. Amplificador Cascode
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3Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Sumário
7. Amplificadores FC (EC) com resistor fonte (emissor)
8. Seguidor de Fonte e Seguidor de Emissor
9. Associações de Transistores
10. Espelhos de Corrente Aprimorados
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4Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Sumário
1. Comparação do MOSFET e BJT
2. Espelhos de Corrente
3. Resposta em Altas Frequências
4. Amplificadores FC e EC com Carga Ativa
5. Amplificadores GC e BC com Carga Ativa
6. Amplificador Cascode
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5Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Amplificadores com Acoplamento capacitivo
1/26/2010
Restrições:
• Resistores de valores elevados• Grandes capacitores
Possibilidades:
• Fontes de corrente constante• Pequenos capacitores• Transistores casados
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6Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Equações básicas do transistor MOS
)1()(21 2
A
DStGSoxnD V
vVvL
WCi +−= μ
ox
oxox t
C ε=
silício de óxido do dadepermissivi =oxε LVV AA'=
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7Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Valôres típicos de Parâmetros de CMOS
1/26/2010
0,8μm 0,5μm 0.25μm 0.18μmParâmetro N P N P N P N P
tox(nm) 15 15 9 9 6 6 4 4
Cox(fF/μm2) 2,3 2,3 3,8 3,8 5,8 5,8 8,6 8,6
μ(cm2/Vs) 550 250 500 180 460 160 450 100
μCox(μA/V2) 127 58 190 68 267 93 387 86
Vto(V) 0,7 -0,7 0,7 -0,8 0,43 -0,62 0,48 -0,45
VDD(V) 5 5 3,3 3,3 2,5 2,5 1,8 1,8
V’A(V/μm) 25 20 20 10 5 6 5 6
Cov(fF/μm) 0,2 0,2 0,4 0,4 0,3 0,3 0,37 0,33
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8Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Equações Básicas do BJT
T
BEVv
SC eIi =
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9Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Equações Básicas do BJT
T
BEVv
pp enn 0)0( =
A
inES WN
nqDAI2
=
T
BEVv
SC eIi =
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10Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Valôres típicos de Parâmetros de BJTs
1/26/2010
Processo Padrão Advanced Low VoltageParâmetro npn pnp lateral npn pnp lateral
AE (μm2) 500 900 2 2
IS (A) 5 x 10-15 2 x 10-15 6 x 10-18 6 x 10-18
βo (A/A) 200 50 100 50
VA (V) 130 50 35 30
VCEO (V) 50 60 8 18
τF (ns) 0,35 30 10 x 10-3 650 x 10-3
Cje0 (pF) 1 0,3 5 x 10-3 14 x 10-3
Cμ0 (pF) 0,3 1 5 x 10-3 15 x 10-3
rx (Ω) 200 300 400 200
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11Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Table 6.3
Condições para operar na região ativa
V,aVvv ttGS 70 5,0 , =≥ VVVv BEonBEonBE 5,0 , ≈≥
OVtGS vVv +=
tGD Vv < VVVv BConBConBC 4,0 , ≅<
OVDS Vv ≥ V 3.02.0 −=OVV VvCE 3,0≥
1 - Criar o canal:
2 – Estrangular o canal no dreno:
1 – Polarizar diretamente B-E:
2 – Polarizar reversamente B-C:
ou:
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12Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Característica i x v na região ativa
)1()(21 2
A
DStGSoxnD V
vVvL
WCi +−= μ
)1(21 2
A
DSOVoxnD V
vvL
WCi += μ
0=Gi
)1(A
CESC V
veIi TVBEv
+=
βC
Bii =
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13Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Table 6.3
Modelos em Baixas frequências
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14Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Transcondutância
2OVV
Dm
Ig =
OVoxnm VL
WCg ))((μ=
Doxnm IL
WCg ⎟⎠⎞
⎜⎝⎛= )(2 μ
T
Cm V
Ig =
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15Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Resistências de entrada e saída
D
A
D
Ao I
LVIVr
'
==C
Ao I
Vr =
∞
Resistência de saída:
Resistência de entrada:
mgr βπ =
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16Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Ganho intrínseco
20
OVVAVA =
OV
A
VLVA
'
02
=
D
oxnA
IWLCV
Aμ2'
0 =
T
A
VVA =0
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17Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Table 6.3
Modelos em Altas frequências
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21Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Sumário
1. Comparação do MOSFET e BJT
2. Espelhos de Corrente
3. Resposta em Altas Frequências
4. Amplificadores FC e EC com Carga Ativa
5. Amplificadores GC e BC com Carga Ativa
6. Amplificador Cascode
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22Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Figure 6.4 Circuit for a basic MOSFET constant-current source.
Espelho de corrente
21
'1 )()(
21
tGSnD VvL
WkI −=
RVVII GSDD
REFD−
==1
1
2
)()(
LW
LW
REF
O
II
=
22
'2 )()(
21
tGSnD VvL
WkI −=
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23Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Figure 6.5 Basic MOSFET current mirror.
Limite de operação
tGSo VVV −≥
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24Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Figure 6.6 Output characteristic of the current source in Fig. 6.4 and the current mirror of Fig. 6.5 for the case Q2 is matched to Q1.
Efeito da resistência de saída
⎟⎟⎠
⎞⎜⎜⎝
⎛ −+=
21
2 1)()(
A
GSoREF
LW
LW
o VVVII
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25Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Figure 6.7 A current-steering circuit.
Divisão de corrente
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26Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Figure 6.8 The basic BJT current mirror.
Espelho de corrente a BJT
1
2
1
2
Q de JBE da áreaQ de JBE da área
==S
S
REF
o
II
II
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27Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Figure 6.9 Analysis of the current mirror taking into account the finite β of the BJTs.
Dependência de β
β11
, Se 12 ++== m
mIImIIREF
oSS
β21
1
+=
REF
o
II
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28Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Projeto do Espelho de corrente
1/26/2010
Figure 6.10 A simple BJT current source.
RVVI BECC
REF−
=
)1(21 A
BEoREFo V
VVII −+
+=
β
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29Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Divisão de Corrente
1/26/2010
Figure 6.11 Generation of a number of constant currents of various magnitudes.
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31Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Sumário
1. Comparação do MOSFET e BJT
2. Espelhos de Corrente
3. Resposta em Altas Frequências
4. Amplificadores FC e EC com Carga Ativa
5. Amplificadores GC e BC com Carga Ativa
6. Amplificador Cascode
1. Comparação do MOSFET e BJT
2. Espelhos de Corrente
4. Amplificadores FC e EC com Carga Ativa
5. Amplificadores GC e BC com Carga Ativa
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32Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Amplificadores com Acoplamento capacitivo
1/26/2010
Restrições:
• Resistores de valores elevados• Grandes capacitores
Possibilidades:
• Fontes de corrente constante• Pequenos capacitores• Transistores casados
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33Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Amplificadores com acoplamento direto
1/26/2010
Figure 6.12 Frequency response of a direct-coupled (dc) amplifier. Observe that the gain does not fall off at low frequencies, and the midband gain AM extends down to zero frequency.
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34Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Função de Transferência
1/26/2010
)()( sFAsA HM=
)1)...(1)(1()1)...(1)(1(
)(21
21
PnPP
ZnZZ
ws
ws
ws
ws
ws
ws
H sF++++++
=
11
1)(pw
sH sF+
≅
Pólo dominante: Um polo dominante existe se o pólo demais baixa frequência está a pelo menos duas oitavas dopólo ou zero mais próximo.
1PH ww ≅
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35Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Cálculo Aproximado de fH
1/26/2010
⎟⎟⎠
⎞⎜⎜⎝
⎛++−⎟⎟
⎠
⎞⎜⎜⎝
⎛++
≅
...112...11
1
22
21
22
21 ZZPP
H
wwww
w
Exemplo 6.5
)1)(1()1(
)(44
5
10x410
10ss
s
H sF++
+=
A resposta em altas frequências de um amplificador é caracterizada por:
Determine a freqüência de -3dB
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36Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Exemplo 6.5
1/26/2010
Figure 6.13 Normalized high-frequency response of the amplifier in Example 6.5.
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37Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Método das constantes de tempo
1/26/2010
nn
nn
H sbsbsbsasasasF
++++++++
=...1...1)( 2
21
221
pnpp wwwb 1...11
211 +++=
∑=
=n
iioi RCb
11
11
1
pwb ≅ ∑
=≅
iioi
H RCbw 11
1
(exato)
Rio = resistência vista dos terminais de Ci com todos os outros capacitores iguais a zero e fontes de sinal anuladas.
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38Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Exemplo
1/26/2010
Exemplo 6.6
Determine AM e fH para o amplificador, onde Rsig = 100 kΩ, Rin = 420 kΩ, Cgs = Cgd= 1pF, gm = 4mA/V e RL = 3,33kΩ.
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39Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Figure 6.14 Circuits for Example 6.6: (a) high-frequency equivalent circuit of a MOSFET amplifier; (b) the equivalent circuit at midband frequencies; (c) circuit for determining the resistance seen by Cgs; and (d) circuit for determining the resistance seen by Cgd.
Exemplo 6.6
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40Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Teorema de Miller
1/26/2010
Figure 6.15 The Miller equivalent circuit.
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41Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Exemplo
1/26/2010
Figure 6.16 Circuit for Example 6.7.
Exemplo 6.7
Determine o circuito equivalente de Miller para Z = R = 1MΩ e Z = C = 1pF. Em cada caso, determine Vo/Vsig.
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42Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Exemplo 6.7
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Sumário
1. Comparação do MOSFET e BJT
2. Espelhos de Corrente
3. Resposta em Altas Frequências
4. Amplificadores FC e EC com Carga Ativa
5. Amplificadores GC e BC com Carga Ativa
6. Amplificador Cascode
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45Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Tabela 4.3
1/26/2010
Definições:
Resistência de entrada sem carga:
Resistência de entrada:
Ganho de tensão em malha aberta:
∞=
≡LRi
ii i
vR
i
iin i
vR ≡
∞=
≡LRi
ovo v
vA
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46Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Tabela 4.3
1/26/2010
Definições:
Ganho de tensão:
Ganho de corrente em curto circuito:
Ganho de corrente:
0=
≡LRi
ois i
iA
i
oi i
iA ≡
i
ov v
vA ≡
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47Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Tabela 4.3
1/26/2010
Definições:
Transcondutância em curto circuito:
Ganho de tensão total:
Ganho de tensão total em circuito aberto:
0=
≡LRi
om v
iG
sig
ov v
vG ≡
∞=
≡LRsig
ovo v
vG
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48Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Tabela 4.3
1/26/2010
Definições:
Resistência de saída própria:
Resistência de saída:
0=
≡ivx
xo i
vR
0=
≡sigvx
xout i
vR
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49Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Tabela 4.3 – Circuitos Equivalentes
1/26/2010
sigin
in
sig
i
RRR
vv
+=
oL
Lvov RR
RAA+
=
oL
Lvo
sigin
inv RR
RARR
RG++
=
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50Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Tabela 4.3 – Circuitos Equivalentes
1/26/2010
omvo RGA =
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51Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Tabela 4.3 – Circuitos Equivalentes
1/26/2010
vosigi
ivo A
RRRG+
=outL
Lvov RR
RGG+
=
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Amplificador FC com Carga Ativa
1/26/2010
Figure 6.17 (a) Active-loaded common-source amplifier. (b) Small-signal analysis of the amplifier in (a), performed both directly on the circuit diagram and using the small-signal model explicitly.
∞=iR omvo rgA −= oo rR =
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53Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Carga ativa CMOS
1/26/2010
Figure 6.18 The CMOS common-source amplifier; (a) circuit; (b) i–v characteristic of the active-load Q2; (c) graphical construction to determine the transfer characteristic; and (d) transfer characteristic.
)//( 211 oomv rrgA −=
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54Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Carga ativa CMOS
1/26/2010
Figure 6.18 The CMOS common-source amplifier; (a) circuit; (b) i–v characteristic of the active-load Q2; (c) graphical construction to determine the transfer characteristic; and (d) transfer characteristic.
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55Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Carga ativa CMOS
1/26/2010
Figure 6.18 The CMOS common-source amplifier; (a) circuit; (b) i–v characteristic of the active-load Q2; (c) graphical construction to determine the transfer characteristic; and (d) transfer characteristic.
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56Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Amplificador EC com Carga Ativa
1/26/2010
Figure 6.19 (a) Active-loaded common-emitter amplifier. (b) Small-signal analysis of the amplifier in (a), performed both directly on the circuit and using the hybrid-π model explicitly.
πrRi = omvo rgA −= oo rR =
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57Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Resposta em frequência do FC e EC com carga ativa
1/26/2010
Figure 6.20 High-frequency equivalent-circuit model of the common-source amplifier. For the common-emitter amplifier, the values of Vsig and Rsig are modified to include the effects of rπ and rx; Cgs is replaced by Cπ, Vgs by Vπ, and Cgd by Cμ.
• Vsig e Rsig representam o equivalente de Thevenin da fonte de sinal e
resistências do circuito de entrada.
• RL representa a carga e o resistor da fonte de corrente constante de
saída.
• CL representa as capacitâncias de carga na saída.
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58Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Análise pelo Teorema de Miller
1/26/2010
Figure 6.21 Approximate equivalent circuit obtained by applying Miller’s theorem while neglecting CL and the load current component supplied by Cgd. This model works reasonably well when Rsig is large and the amplifier high-frequency response is dominated by the pole formed by Rsig and Cin.
H
M
sig
o
ws
AVV
+≅
1
'LmM RgA −=
sigLmgdgsH RRgCC
f)]1([2
1'++
=π
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59Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Método das Constantes de tempo
1/26/2010
Figure 6.22 Application of the open-circuit time-constants method to the CS equivalent circuit of Fig. 6.20.
''' ])1([ LLLLmsiggdsiggsH RCRRgRCRC ++++=τ
HHf
πτ21
≅
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60Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Análise exata
1/26/2010
Figure 6.23 Analysis of the CS high-frequency equivalent circuit.
'2''
'
])[(})()]1({[1)]/(1[
LsiggdLgsgdLLgdLsigLmgdgs
mgdLm
sig
o
RRCCCCCsRCCRRgCCsgCsRg
VV
++++++++
−−=
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61Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Análise exata
1/26/2010
21
2
2121
)11(1)1)(1()(pppppp ww
sww
sw
swssD +++=++=
21
2
1
1)(ppp ww
swssD ++≅
''1 )()]1([1
LgdLsigLmgdgsp RCCRRgCC
w++++
=
12 se pp ww >>
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63Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Figure 6.25 (a) High-frequency equivalent circuit of the common-emitter amplifier. (b) Equivalent circuit obtained after the Thévenin theorem is employed to simplify the resistive circuit at the input.
Análise para o emissor comum
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64Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Figure 6.26 (a) High-frequency equivalent circuit of a CS amplifier fed with a signal source having a very low (effectively zero) resistance. (b) The circuit with Vsig reduced to zero. (c) Bode plot for the gain of the circuit in (a).
'
'
)(1)]/(1[
LgdL
mgdLm
sig
o
RCCsgCsRg
VV
++
−−=
Caso com Rsig = 0
')(21
LgdLH RCC
f+
=π
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65Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Caso com Rsig = 0
Figure 6.26 (a) High-frequency equivalent circuit of a CS amplifier fed with a signal source having a very low (effectively zero) resistance. (b) The circuit with Vsig reduced to zero. (c) Bode plot for the gain of the circuit in (a).
''
)(21||
LgdLLmHMt RCC
RgfAf+
==π
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66Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Sumário
1. Comparação do MOSFET e BJT
2. Espelhos de Corrente
3. Resposta em Altas Frequências
4. Amplificadores FC e EC com Carga Ativa
5. Amplificadores GC e BC com Carga Ativa
6. Amplificador Cascode
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67Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Figure 6.27 (a) Active-loaded common-gate amplifier. (b) MOSFET equivalent circuit for the CG case in which the body and gate terminals are connected to ground. (c) Small-signal analysis performed directly on the circuit diagram with the T model of (b) used implicitly. (d) Operation with the output open-circuited.
Gate comum com Carga Ativa
mmb gg χ=
2,0 a 1,0=χ
Efeito body (substrato)
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68Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Gate comum com Carga Ativa – Resistência de entrada
roimbmi ivggi ++= )(
o
Lii
o
oiro r
Rivr
vvi −=
−=
ombm
Lo
i
iin rgg
RrivR
)(1 +++
==
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69Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Gate comum com Carga Ativa - RL=∞
∞=→∞= iL RR Se
iiombmioo vvrggvirv ++=+= )(
ombmi
ov rgg
vvA )(10 ++==
0
1AR
ggARrR L
mbmvo
Loin +
+≅
+=
ombmvosig
ov rggA
vvG )(10 ++===
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70Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Gate comum com Carga Ativa – Ganho de Tensão
oL
Lvo
in
L
i
ov rR
RARR
vvA
+===
LiLoo RiRiv ==inii Riv =
SvooL
Lvo
inS
L
sig
ov RArR
RARR
RvvG
++=
+==
)( inSisig RRiv +=
LiLoo RiRiv ==
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Figure 6.28 (a) The output resistance Ro is found by setting vi 5 0. (b) The output resistance Rout is obtained by setting vsig 5 0.
Gate comum com Carga Ativa – Resistência de saída
SxRiv =
vrvggiv ombmxx +++= ])([
SvooSombmoout RArRrggrR +=+++= ])(1[
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Figure 6.29 The impedance transformation property of the CG configuration.
Buffer de corrente
oSmbmSSombmoout rRggRRrggrR ])(1[])(1[ +++=+++=
oSmoSmbmout rRgrRggR )1(])(1[ +≈++≅
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Resposta em frequencia do GC
1/26/2010
Figure 6.31 (a) The common-gate amplifier with the transistor internal capacitances shown. A load capacitance CL is also included. (b)Equivalent circuit for the case in which ro is neglected.
)1||( 2
11
mbmSgs
p
ggRC
f
+
=π
LL2 )RC( 2
1+
=gd
p Cf
π
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75Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Resposta em frequencia do GC
1/26/2010
Figure 6.32 Circuits for determining Rgs and Rgd.
])RC([C 21
gdLgs ++=
gdgsH CR
fπ
inSgs RRR ||=
outLgd RRR ||=
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Amplificador Base Comum
1/26/2010
Figure 6.33 (a) Active-loaded common-base amplifier. (b) Small-signal analysis performed directly on the circuit diagram with the BJT T model used implicitly. (c) Small-signal analysis with the output open-circuited.
e
L
e
o
Loin
rR
rr
RrR
)1(1
+++
+=
β
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77Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Amplificador Base Comum
1/26/2010
Figure 6.33 (a) Active-loaded common-base amplifier. (b) Small-signal analysis performed directly on the circuit diagram with the BJT T model used implicitly. (c) Small-signal analysis with the output open-circuited.
011 ArgvvA om
Ri
ovo
L
+=+==∞→
πrRi =
voei
i
Rsig
ovo A
RRR
vvG
L+
==∞→
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Amplificador Base Comum
1/26/2010
Figure 6.34 Analysis of the CB circuit to determine Rout. Observe that the current ix that enters the transistor must equal the sum of the two currents v/rπ and v/Re that leave the transistor, that is; ix 5 v/rπ 1 v/Re.
oo rR =
oeme
eomoout
rRgRRrgrR)1(
)1(''
'
++=++=
πrRR ee || :onde ' =
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79Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Buffer de Corrente
1/26/2010
Figure 6.35 Input and output resistances of the CB amplifier.
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80Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Sumário
1. Comparação do MOSFET e BJT
2. Espelhos de Corrente
3. Resposta em Altas Frequências
4. Amplificadores FC e EC com Carga Ativa
5. Amplificadores GC e BC com Carga Ativa
6. Amplificador Cascode
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Amplificador Cascode
1/26/2010
Figure 6.36 (a) The MOS cascode amplifier. (b) The circuit prepared for small-signal analysis with various input and output resistances indicated. (c) The cascode with the output open-circuited.
2222
1
vo
L
mbmin A
Rgg
R ++
=
2222 )(1 ombmvo rggA ++=
10122 oovooout rArArR ≈+=
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Amplificador Cascode
1/26/2010
Figure 6.36 (a) The MOS cascode amplifier. (b) The circuit prepared for small-signal analysis with various input and output resistances indicated. (c) The cascode with the output open-circuited.
2222 )(1 ombmvo rggA ++=
iomvoovoo vrgAvAv )( 11212 −==
2)( omRi
ovo rg
vvA
L
−≈=∞→
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83Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Amplificador Cascode
1/26/2010
Figure 6.37 (a and b) Two equivalent circuits for the output of the cascode amplifier. Either circuit can be used to determine the gain Av 5vo/vi, which is equal to Gv because Rin 5 ∞ and thus vi 5 vsig. (c) Equivalent circuit for determining the voltage gain of the CS stage, Q1.
oL
Lv rAR
RAA0
20 +
−=
)]1(||[0
1
AR
grg
vv L
mom
i
o +−=
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Amplificador Cascode
1/26/2010
oL
Lv rAR
RAA0
20 +
−=
)]1(||[0
1
AR
grg
vv L
mom
i
o +−=
oL rAR 0 com =
212
0AAv −=
01
21
2Arg
vv om
i
o −=−=
oL rR = com
0AAv −=
21 −=i
o
vv
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Resposta em Frequencia do Cascode MOS
1/26/2010
Figure 6.38 The cascode circuit with the various transistor capacitances indicated.
)||)(()(])1[(
2121
11111
outLgdLdgsdb
dsigdmgdsiggsH
RRCCRCCRRRgCRC
++++=+++=τ
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Rsig = 0 e RL=A0ro
Comparação FC x Cascode
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Amplificador Cascode a BJT
1/26/2010
Figure 6.40 (a) The BJT cascode amplifier. (b) The circuit prepared for small-signal analysis with various input and output resistances indicated. Note that rx is neglected. (c) The cascode with the output open-circuited.
oemout rRgR )1( '+=
πrRR ee ||' =
22222 )1( oomout rrrgR βπ ≈+=
(6.118)
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Amplificador Cascode a BJT
1/26/2010
Figure 6.40 (a) The BJT cascode amplifier. (b) The circuit prepared for small-signal analysis with various input and output resistances indicated. Note that rx is neglected. (c) The cascode with the output open-circuited.
02AAvo β−=
ioimo vrrvgv βπ −≈−= )||( 2111
02222 1 ArgA omvo ≈+=
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Amplificador Cascode a BJT – Modelos Equivalentes
1/26/2010
Figure 6.41 (a) Equivalent circuit for the cascode amplifier in terms of the open-circuit voltage gain Avo 5 –βA0. (b) Equivalent circuit in terms of the overall short-circuit transconductance Gm . gm. (c) Equivalent circuit for determining the gain of the CE stage, Q1.
11 −=i
o
vv
oL rR <<
21 β
−=i
o
vv
oL rR β=
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90Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Amplificador Cascode a BJT – Resposta em frequência
1/26/2010
Figure 6.42 Determining the frequency response of the BJT cascode amplifier. Note that in addition to the BJT capacitances Cπ and Cμ, the capacitance between the collector and the substrate Ccs for each transistor are also included.
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Fonte de Corrente Cascode
1/26/2010
Figure 6.43 A cascode current-source.
Transistor do espelho de corrente
Transistor em gate comum
122 )( oomL rrgR =
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Duplo cascode
1/26/2010
Figure 6.44 Double cascoding.
ooomomout rArrgrgR 20133223 ))(( ==
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Cascode dobrado
1/26/2010
Figure 6.45 The folded cascode.
21 II −
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94Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Cascode BiCMOS
Rin infinita
Maior resistência de saída (βBJT>A0_FET e ro_BJT > ro_FET)
Efeito Miller reduzido (Rin2_BJT<Rin2_FET)
1/26/2010
Figure 6.46 BiCMOS cascodes.
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Cascode BiCMOS
Maior resistência de saída com MOSFET Q3 pois com BJT ficaria limitada a βro
1/26/2010
Figure 6.46 BiCMOS cascodes.
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Sumário
7. Amplificadores FC (EC) com resistor fonte (emissor)
8. Seguidor de Fonte e Seguidor de Emissor
9. Associações de Transistores
10. Espelhos de Corrente Aprimorados
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97Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Fonte comum com resistor de fonte
1/26/2010
Figure 6.47 (a) A CS amplifier with a source-degeneration resistance Rs. (b) Circuit for small-signal analysis. (c) Circuit with the output open to determine Avo. (d) Output equivalent circuit. (e) Another output equivalent circuit in terms of Gm.
xsmo
xsxx iRg
riRvi −
−=
])(1[
)(
Smbmo
SombmSoout
Rggr
RrggRrR
++≈
+++=
Rout aumenta com o aumento de RS
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98Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Fonte comum com resistor de fonte
1/26/2010
Figure 6.47 (a) A CS amplifier with a source-degeneration resistance Rs. (b) Circuit for small-signal analysis. (c) Circuit with the output open to determine Avo. (d) Output equivalent circuit. (e) Another output equivalent circuit in terms of Gm.
oimo rvgv −=
0ArgA omvo −=−=
RS não afeta o ganho Avo
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99Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Fonte comum com resistor de fonte
1/26/2010
Figure 6.47 (a) A CS amplifier with a source-degeneration resistance Rs. (b) Circuit for small-signal analysis. (c) Circuit with the output open to determine Avo. (d) Output equivalent circuit. (e) Another output equivalent circuit in terms of Gm.
Smbm
m
out
vom Rgg
gRAG
)(1||
++==
outL
Lvov RR
RAA+
−=
O ganho Av cai com o aumento de RS
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100Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
FC com resistor de fonte – Resposta em frequência
1/26/2010
Figure 6.48 (a) The CS amplifier circuit, with a source resistance Rs, prepared for frequency-response analysis. (b) Determining the resistance Rgd seen by the capacitance Cgd.
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101Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
FC com resistor de fonte – Resposta em frequência
1/26/2010
Figure 6.48 (a) The CS amplifier circuit, with a source resistance Rs, prepared for frequency-response analysis. (b) Determining the resistance Rgd seen by the capacitance Cgd.
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102Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
FC com resistor de fonte – Resposta em frequência
Melhora a linearidade do amplificador – realimentação negativa - vgs é apenas uma parcela de vi
Aumenta a faixa de passagem do amplificador
1/26/2010
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103Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Emissor Comum com resistor de emissor
1/26/2010
Figure 6.49 A CE amplifier with emitter degeneration: (a) circuit; (b) analysis to determine Rin; and (c) analysis to determine Avo.
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Emissor Comum com resistor de emissor
1/26/2010
Figure 6.49 A CE amplifier with emitter degeneration: (a) circuit; (b) analysis to determine Rin; and (c) analysis to determine Avo.
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Sumário
7. Amplificadores FC (EC) com resistor fonte (emissor)
8. Seguidor de Fonte e Seguidor de Emissor
9. Associações de Transistores
10. Espelhos de Corrente Aprimorados
7. Amplificadores FC (EC) com resistor fonte (emissor)
9. Associações de Transistores
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Seguidor de Fonte
1/26/2010
Figure 6.50 (a) An IC source follower. (b) Small-signal equivalent-circuit model of the source follower. (c) A simplified version of the equivalent circuit. (d) Determining the output resistance of the source follower.
'L
Rvgv gsmo =
oigs vvv −=
'
'
1 Lm
Lm
i
ov Rg
RgvvA
+==
χ+=
+≅
++=
11
)(1 mbm
m
ombm
omvo gg
grgg
rgA
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107Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Seguidor de Fonte
1/26/2010
Figure 6.50 (a) An IC source follower. (b) Small-signal equivalent-circuit model of the source follower. (c) A simplified version of the equivalent circuit. (d) Determining the output resistance of the source follower.
ombm
o rgg
R ||1+
=
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108Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Seguidor de Fonte – Resposta em frequência
1/26/2010
Figure 6.51 Analysis of the high-frequency response of the source follower: (a) Equivalent circuit; (b) simplified equivalent circuit; and (c)determining the resistance Rgs seen by Cgs.
siggd RR =
oLgd RRR ||=
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Seguidor de Fonte – Resposta em frequência
1/26/2010
Figure 6.51 Analysis of the high-frequency response of the source follower: (a) Equivalent circuit; (b) simplified equivalent circuit; and (c)determining the resistance Rgs seen by Cgs.
'
'
1 Lm
Lsiggs Rg
RRR
+
+=
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110Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Seguidor de emissor - Resposta em frequência
1/26/2010
Figure 6.52 (a) Emitter follower. (b) High-frequency equivalent circuit. (c) Simplified equivalent circuit.
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Seguidor de emissor - Resposta em frequência
1/26/2010
Figure 6.52 (a) Emitter follower. (b) High-frequency equivalent circuit. (c) Simplified equivalent circuit.
])1([|| ''Lsig RrRR ++= βπμ
e
Lsig
Lsig
rR
rR
RRR
''
''
1 ++
+=
π
π
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112Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Sumário
7. Amplificadores FC (EC) com resistor fonte (emissor)
8. Seguidor de Fonte e Seguidor de Emissor
9. Associações de Transistores
10. Espelhos de Corrente Aprimorados
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113Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
DC-FC, CC-EC e DC-EC
1/26/2010
Figure 6.53 (a) CD–CS amplifier. (b) CC–CE amplifier. (c) CD–CE amplifier.
• Larga faixa de passagem
• Alta resistência de entrada
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Figure 6.54 Circuits for Example 6.13: (a) The CC–CE circuit prepared for low-frequency small-signal analysis; (b) the circuit at high frequencies, with Vsig set to zero to enable determination of the open-circuit time constants; and (c) a CE amplifier for comparison.
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Configuração Darlington
1/26/2010
Figure 6.55 (a) The Darlington configuration; (b) voltage follower using the Darlington configuration; and (c) the Darlington follower with a bias current I applied to Q1 to ensure that its β remains high.
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CC-BC e DC-GC
1/26/2010
Figure 6.56 (a) A CC–CB amplifier. (b) Another version of the CC–CB circuit with Q2 implemented using a pnp transistor. (c) The MOSFET version of the circuit in (a).
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CC-BC e DC-GC - Resposta em frequência
1/26/2010
Figure 6.57 (a) Equivalent circuit for the amplifier in Fig. 6.56(a). (b) Simplified equivalent circuit. Note that the equivalent circuits in (a) and (b) also apply to the circuit shown in Fig. 6.56(b). In addition, they can be easily adapted for the MOSFET circuit in Fig. 6.56(c), with 2rπeliminated, Cπ replaced with Cgs, Cμ replaced with Cgd, and Vπ replaced with Vgs.
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118Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Sumário
7. Amplificadores FC (EC) com resistor fonte (emissor)
8. Seguidor de Fonte e Seguidor de Emissor
9. Associações de Transistores
10. Espelhos de Corrente Aprimorados
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Figure 6.58 A cascode MOS current mirror.
Espelho Cascode MOS
23333 ])(1[ oombmoo rrggrR +++=
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Figure 6.59 A current mirror with base-current compensation.
Espelho com compensação da corrente de base
22 /211
)/(211
βββ +≈
++=
REF
o
II
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Figure 6.60 The Wilson bipolar current mirror: (a) circuit showing analysis to determine the current transfer ratio; and (b) determining the output resistance. Note that the current ix that enters Q3 must equal the sum of the currents that leave it, 2i.
Fonte de Wilson
2/211β+
≈REF
o
II
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122Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Figure 6.60 The Wilson bipolar current mirror: (a) circuit showing analysis to determine the current transfer ratio; and (b) determining the output resistance. Note that the current ix that enters Q3 must equal the sum of the currents that leave it, 2i.
Fonte de Wilson
2o
orR β
=
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123Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Figure 6.61 The Wilson MOS mirror: (a) circuit; (b) analysis to determine output resistance; and (c) modified circuit.
Fonte de Wilson MOS
233233 )2( oomomoo rrgrgrR ≈+≅
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Figure 6.61 The Wilson MOS mirror: (a) circuit; (b) analysis to determine output resistance; and (c) modified circuit.
Fonte de Wilson MOS
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Figure 6.62 The Widlar current source.
Fonte de Corrente Widlar
T
BEv
v
SREF eII1
=
T
BEv
v
SO eII2
=
T
BEBEv
vv
So
REF eII
I 21−
=
EoBEBE RIVV += 21
⎟⎟⎠
⎞⎜⎜⎝
⎛=
o
REFTEo I
IVRI ln
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126Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.1/26/2010
Figure 6.63 Circuits for Example 6.14.
Exemplo 6.14
Projetar as fontes de corrente para Io = 10 μA. Fazer Iref = 1mA na Fonte Widlar.
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Figure 6.64 Capture schematic of the CS amplifier in Example 6.15.
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Figure 6.65 Transistor equivalency.
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Figure 6.66 (a) Voltage transfer characteristic of the CS amplifier in Example 6.15.
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Figure 6.66 (Continued) (b) Expanded view of the transfer characteristic in the high-gain region. Also shown are the transfer characteristics where process variations cause the width of transistor M1 to change by +15% and –15% from its nominal value of W1 = 12.5 μm.
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Figure 6.67 Capture schematic of the CS amplifier in Example 6.16.
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Figure 6.68 Frequency response of (a) the CS amplifier and (b) the folded-cascode amplifier in Example 6.16, with Rsig = 100 Ω and Rsig = 1 μΩ.
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Figure 6.69 Capture schematic of the folded-cascode amplifier in Example 6.16.
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Figure P6.9
6.9 Determine a resistência incremental de cada diodo da figura abaixo.Assuma I = 0,1 mA. Para o Mosfet μnCox = 200 μA/V2 e W/L = 10.
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Figure P6.25
6.25 Determine Io em função de IREF e (W/L) dos dispositivos.
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Figure P6.26
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Figure P6.28
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Figure P6.33
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Figure P6.34
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Figure P6.35
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Figure P6.37
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Figure P6.46
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Figure P6.54
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Figure P6.57
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Figure P6.61
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Figure P6.63
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Figure P6.65
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Figure P6.72
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Figure P6.73
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Figure P6.75
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Figure P6.76
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Figure P6.83
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Figure P6.84
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Figure P6.85
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Figure P6.93
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Figure P6.96
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Figure P6.98
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Figure P6.99
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Figure P6.107
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Figure P6.121
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Figure P6.122
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Figure P6.123
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Figure P6.124
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Figure P6.127
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Figure P6.130
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Figure P6.134
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Figure P6.143
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Figure P6.144
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Figure P6.145