Laboratório de Implantação Iônica Instituto de Física – UFRGS
Ion Implantation LaboratoryInstitute of Physics – UFRGS
Biennial Report 2015/16
Laboratório de Implantação Iônica Instituto de Física – UFRGS
Ion Implantation LaboratoryInstitute of Physics – UFRGS
Biennial Report – 2015/16
Editors
Rogério Luís MaltezJosé Henrique dos Santos
Pedro Luis Grande
Porto Alegre2016
Laboratório de Implantação Iônica Instituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
Table of Contents
Preface..............................................................................................................................7
Staff...................................................................................................................................9
Permanent Researchers...........................................................................................9Permanent Technicians.........................................................................................10Temporary Technicians.........................................................................................10Postdocs................................................................................................................11Graduate students (Master and PhD)....................................................................11
Brazilian Collaborators...................................................................................................13
International collaborators..............................................................................................14
Facilities..........................................................................................................................17
Users’ highlights.............................................................................................................18
Agenor Hentz........................................................................................................19Cláudio Radtke.....................................................................................................21Cesar Aguzzoli......................................................................................................23Cesar Aguzzoli......................................................................................................23Daniel Lorscheitter Baptista.................................................................................25Fernanda Chiarello Stedile...................................................................................27Gabriel Vieira Soares............................................................................................29Henri Boudinov....................................................................................................31Johnny Ferraz Dias...............................................................................................33Jonder Morais.......................................................................................................35Livio Amaral.........................................................................................................37Moni Behar...........................................................................................................39Moni Behar...........................................................................................................40Paulo F. P. Fichtner...............................................................................................41Pedro Luis Grande................................................................................................43Pedro Luis Grande................................................................................................45Raul Carlos Fadanelli...........................................................................................47Ricardo Meurer Papaléo.......................................................................................49
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Laboratório de Implantação IônicaInstituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
Publications in peer reviewed journals...........................................................................51
Conference Proceedings.................................................................................................63
Books and book chapters................................................................................................67
Oral contributions and invited talks................................................................................67
Supervision of thesis and dissertations (completed).......................................................75
Patent..............................................................................................................................77
Organization of conferences...........................................................................................77
Members in international committees and in editorial boards........................................78
Partners (Universities, Research Institutes and Companies)..........................................79
Projects...........................................................................................................................79
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Laboratório de Implantação Iônica Instituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
Preface
The Ion Implantation Laboratory (IIL) is an ion beam center at the Institute of
Physics (IF) at the Federal University of Rio Grande do Sul (UFRGS), Brazil. The IF-
UFRGS is located in the city of Porto Alegre (state of Rio Grande do Sul) and it is
ranked as the most important research center of Physics in southern Brazil.
The IIL has three accelerators that provide a wide variety of positive ions in a
broad energy range and are used by tens of researchers from Brazil and other countries
from Latin America for ion-beam analysis, ion implantation and ion irradiation. Several
beam lines with different analytical techniques are available to scientists from different
fields. The techniques are:
PIXE (Particle-Induced X-ray Emission): provides elemental concentrations of
the order of part per million;
RBS (Rutherford Backscattering Spectrometry): used for characterization of
different structures, including multi-layered targets;
NRA (Nuclear Reaction Analysis) and NRP (Nuclear Reaction Profiling): ideal
to detect and profile specific isotopes respectively;
Microprobe: allow the use of techniques like PIXE, RBS and STIM with
micrometer beam size;
MEIS (Medium Energy Ion Scattering): it is a high-resolution RBS technique
with isotope-separation capability;
ERDA (Elastic Recoil Detection Analysis): for quantitative analysis of light
elements in solids, usually H and He;
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Laboratório de Implantação IônicaInstituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
Ion Implantation: used for modification of materials under controlled
parameters.
The infrastructure of the laboratory includes a large variety of ovens, a cleaning
room, a MEV microscope and photoluminescence laboratory, A fully dedicated
workshop allows the maintenance of the laboratory in a regular basis. A general view
of the laboratory is shown below, featuring the beam lines of the
Tandetron accelerator.
This is the fifth issue of our activities and covers two years (2015-2016) of
scientific production of all staff members, postdocs and students of the IIL. In spite of
strong difficulties arising from severe restriction of budget and increase of academic
duties in our university we are all committed to go further.
Pedro L. Grande
Head of Ion Implantation Laboratory
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Laboratório de Implantação Iônica Instituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
Staff
Permanent Researchers
Pedro Luís Grande, PhD. (IF, UFRGS, 1989) - Group leader since 2009.
Johnny Ferraz Dias, PhD. (UG, BELGIUM, 1994) – Accelerators coordinator since 2010.
Fernando Claudio Zawislak, PhD. (IF, UFRGS, 1967) - Founder and Group leader between 1980 and 2008.
Moni Behar, PhD. (UBA, ARGENTINA, 1970) – Accelerators coordinator between 1982 and 2009.
Israel Jacob Rabin Baumvol, PhD. (IF, UFRGS, 1977)
Livio Amaral, PhD. (IF, UFRGS, 1982)
Paulo Fernando Papaleo Fichtner, PhD. (IF, UFRGS, 1987)
Henri Ivanov Boudinov , PhD. (IE-BAN, BULGARIA, 1991)
Fernanda Chiarello Stedile, PhD. (IF, UFRGS, 1994)
Ricardo Meurer Papaléo, PhD. (U.UPPSALA, SWEDEN, 1996) PUC-RS
Rogério Luis Maltez, PhD. (IF, UFRGS, 1997)
Claudio Radtke,PhD. (IF, UFRGS, 2003)
Cristiano Krug, PhD. (IF, UFRGS, 2003)
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Laboratório de Implantação IônicaInstituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
Daniel Lorscheitter Baptista, PhD. (IF, UFRGS, 2003)
Gabriel Viera Soares, PhD. (PGMicro, UFRGS, 2008)
Raul Carlos Fadanelli Filho, PhD. (IF, UFRGS, 2005)
Leandro Langie Araujo, PhD. (IF, UFRGS, 2004)
Agenor Hentz da Silva Jr., PhD. (IF, UFRGS, 2007)
Raquel Giulian, PhD. (RSPE, ANU, AUSTRALIA, 2009)
Jonder Morais, PhD.(IFGW, Unicamp, 1995)
José Henrique dos Santos, PhD (IF, UFRGS, 1997)
Permanent Technicians
Agostinho A. Bulla, Electrical Engineer responsible for the accelerators
Clodomiro F. Castello, Accelerator support and operation
Paulo R. Borba, Accelerator support and operation (In memoriam)
Paulo Kovalick, Workshop
Temporary Technicians
Marcelo Cavagnolli, IE-MULTI (Multi-users support)
Eduardo Ribeiro dos Santos, IE-MULTI (Multi-users support)
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Laboratório de Implantação Iônica Instituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
Postdocs
Chiara Nascimento (2014 – 2016)
Bárbara Canto (2016 – 2019)
Cláudia Telles de Souza (2014 – 2016)
Igor Alencar (2015 – 2017)
Liana Appel Boufleur Niekraszewicz (2015 – 2020)
Paulo Jobim (2011 – 2016)
Silma Alberton Corrêa (2015 – 2017)
Tiago Ávila (2016)
Graduate students (Master and PhD)
Deiverti de Vila Bauer - Master
Eduardo Pitthan Filho – PhD
Eduardo Garcia Ribas – PhD
Eduardo Serralta Hurtado de Menezes – Master Eliana Antunes M. A. Van Etten – PhD
Eliasibe Luis – PhD
Flávia Fernandes – PhD
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Laboratório de Implantação IônicaInstituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
Flávio Matias da Silva – PhD
Frâncio Rodrigues – Master Gabriel Guteres Marmitt – PhD
Gabriel Volkweis Leite – PhD
Gabriela Copetti – PhD
Guilherme Koszeniewski Rolim – PhD
Guilherme Sombrio – PhD
Gustavo Henrique Stedile Dartora – Master
Henrique Trombini -– PhD
Horácio Coelho Júnior – PhD
Italo Martins Oyarzabal - Master
Ivan Rodrigo Kaufmann – PhD
Josiane Bueno Salazar - PhD
Lais Gomes de Almeida – Master
Louise Patron Etcheverry – PhD
Mariana de Mello Timm - PhD
Masahiro Hatori – PhD
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Laboratório de Implantação Iônica Instituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
Milena Sulzbach – Master
Taís Orestes Feijó – Master
Tatiele Ferrari – Master
Vagner Zeizer Carvalho Paes – PhD
Zacarias Eduardo Fabrim – PhD
Brazilian Collaborators
A. Ferreira, UFBA, Salvador
A. Paesano Jr., Maringá, PR.
A. M. H. de Andrade, UFRGS, Porto Alegre
A.L. Gobbi, LNN, Campinas
C. E. I. dos Santos, FURG, RS (Santo Antônio da Patrulha)
C. Requião, UFRGS, Porto Alegre
D. Mosca, Curitiba, PR.
F. Bernardi, UFRGS, Porto Alegre
F. R. da Silva, UNILASALLE, Canoas, RS
I. Hummelgen, UFPR, Curitiba
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Laboratório de Implantação IônicaInstituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
J. da Silva, ULBRA, Canoas, RS
J. Geshev, UFRGS, Porto Alegre
J.F. Dias, IO-USP, São Paulo, SP
J.J. Zocche, UNESC, Criciúma, SC
J.W. Swart, UNICAMP, Campinas
L.G. Pereira, UFRGS, Porto Alegre
L.M. Nagamine, USP, São Paulo
P. Pureur, UFRGS, Porto Alegre
V.M. de Andrade, UNESC, Criciúma, SC
International collaborators
André Turos,Eletronic Department. Cracow, Poland
Benjamin Balke, Uni-Mainz, Germany
Bruno Canut, Universidade Claude Bernard, Lyon 1, France
Christina Trautmann, Gesellschaft für Schwerionenforschung, Darmstadt, Germany
Cláudia Gomes, Universidade do Porto, Porto, Portugal
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Laboratório de Implantação Iônica Instituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
Claudia Montanaro, Universidad de Buenos Aires, Argentina
Claudia S. Schnohr, Friedrich-Schiller-Universität Jena , Germany
Dieter Schmeisser, Brandenburg University of Technology Cottbus-Senftenberg,Germany
Dr Jonathan England,, Varian Semiconductor Equipment / Applied Materials, UK
Gerado Garcia Bermudez, CNEA, Buenos Aires, Argentina
Gregor Schwietz, Helmholtz-Zentrum, Berlin
Horst-Günter Rubahn, NanoSYD, Sonderborg, Denmark
Isabel Abril, Universidad de Alicant, Spain
Iuri Danilov, University of Nizhny Novgorod, Russia
Jaap van den Berg, University of Huddersfield, UK
Jakob Kjelstrup-Hansen, Sonderborg, Denmark.
Joaquim Farias, Universidade do Porto, Porto, Portugal
L. Thome, Orsay France
Leonard C. Feldman, Rutgers University, U.S.A.
Maarten Vos, ANU, Austrália
Mario Pomares, Universidad de la Habana, Cuba
Melissa K. Santala, Oregon State University, USA
N. Moncofre, Universite C. Bernard, Lyon, France
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Laboratório de Implantação IônicaInstituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
Nestor Arista, Centro Atomico Bariloche, Argentina
Osvaldo de Mello, Universidad de la Habana, Cuba
R.Garcia Molina Universidad de Murcia, Spain
Ricardo. D. Muino, DIPC and Centro de Fisica de Materiales, CSIC-UPV/EHU, SanSebastian, Spain
Roberto dos Reis, National Center for Electron Microscopy, LBNL, Berkeley, U.S.A.
Saúl Larramendi, IMRE, Universidade de Havana, Cuba
Stephen E. Donnelly, Huddersfield, United Kingdom.
Stella Canut, Universidade Claude Bernard, Lyon 1, France
Torgny Gustafsson, Rutgers University, U.S.A.
Yusleidy Enamorado Horrutiner, IQ, Universidade de Havana, Cuba
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Laboratório de Implantação Iônica Instituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
Facilities
The Ion Implantation Laboratory has three accelerators that provide a widevariety of positive ions in a broad energy range, they are:
• 3 MV Tandetron accelerator;• 500 kV and 250 kV accelarators.
3 MV Tandetron 500 kV accelerator 250 kV accelerator
Besides the accelarators, the laboratory has the following additional facilities:
• Photoluminescence laboratory;• Clean-room;• Furnaces, ovens and reactor chambers;• Workshop.
Furnaces and reactors Optical characterization Clean-room
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Laboratório de Implantação IônicaInstituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
Users’ highlights selected
among their published articles
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Laboratório de Implantação Iônica Instituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
On the use of MEIS cartography for the determination of
Si1-xGex Thin Film Strain.
Agenor Hentz
The characterization of the nanoscopic state of strain in crystalline
semicondutors is important for a large number of technological issues. In particular,
strained Si1-xGex alloys have been actively investigated during the last years because of
their application in high-mobility metal oxide-semicondutor field-effect transistors.
In this work we use an ion-beam (medium energy ion scattering - MEIS) probe in
order to quantify the amount of strain of two Si1-xGex samples with nominal Ge
fractions of 20 and 30 at %, instead of the traditional diffraction and contrast-phase
techniques. MEIS has recently been successfully applied to determine the depth profile
of strain for wide variety of crystalline materials, such as the heterostructure formed by
a thin Si overlayer on top of SiGe crystal. In order for the MEIS technique to be useful
for strain determination, it must be operated in the so-called “stereographic” mode. In
this mode, a series of standard 1-D MEIS spectra is collected for a given structure, each
one in a slightly shifted azimuthal angle (rotation around the surface normal direction).
These spectra are joined together in a 2-D colormap stereographic projection which can
be compared to simulation results (see figure). The main features of these maps are the
presence of pronounced spots, corresponding to crystallographic blocking directions,
and curved lines, corresponding to different crystallographic planes. Additionally,
different energy regions of the 1-D MEIS spectra can be selected to form the 2-D
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Laboratório de Implantação IônicaInstituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
colormap, thus corresponding to different sample depths, allowing, in principle, one to
quantify the amount of strain as a function of the sample depth.
As a result, we found that the method is validated for the determination of the
strain in Si1-xGex and it agrees with pseudomorphically strained samples of Si1-xGex
with x=20 and 30%.
(a) Meis cartography of a reference Si(100) sample used for angular calibration. (b) MEIS
cartography for Si0.8Ge0.2. (c) and (d) are the same as in (a) and (b), corresponding, including the
main directions represented by circles.
Paper reference:On the use of MEIS cartography for the determination of Si1-xGex thin-film strain, T.S. Avila,
P.F.P. Fichtner, A. Hentz, P.L. Grande, Thin-Solid Films, 611 (2015) 101-106.
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Laboratório de Implantação Iônica Instituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
Stabilization of the GeO2/Ge Interface by Nitrogen
Incorporation in a One-Step NO Thermal Oxynitridation
Cláudio Radtke
Germanium (Ge) is a promising candidate for replacing silicon (Si) as p-channel
material in metal-oxide-semiconductor field effect transistors (MOSFET) owing to its
high hole mobility. However, the lack of a stable passivation layer for Ge surface
hinders the development of such technology. Unlike silicon dioxide (SiO2), germanium
dioxide (GeO2) is water-soluble and also thermally unstable at temperatures usually
employed during device processing.
In the present work, we investigated the incorporation of nitrogen in germanium
oxide and its role in the improved stability of the resulting dielectric layer. GeOxNy
films were produced in a one-step process by direct thermal oxynitridation of the Ge
surface using nitric oxide gas (NO), reducing the eventual damage of other nitridation
techniques like plasma immersion. Incorporation of a relatively low nitrogen
concentration into the oxide led to significant enhancement of the thermal stability of
GeO2/Ge structures.
N depth profiling evidenced that this element is spread throughout the whole
oxynitride film, with its incorporation being intervened by the production of vacancies
at the dielectric/Ge interface. Besides O transport during thermal growth of the
oxynitride layer, N was also confirmed as a mobile species. However, the lower
mobility of the later results in the blockage of vacancy diffusion paths. This reduced
vacancy diffusivity leads to a greater thermal stability and oxidation resistance of the
overall oxynitride lattice in comparison with pure oxide. The final N content in the
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Laboratório de Implantação IônicaInstituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
formed layer is the net result of its incorporation and removal, mechanisms that take
place simultaneously during exposure of Ge to NO at high temperatures. Depending on
time and temperature of the NO treatment, oxynitride layers with different thicknesses
can be obtained. This procedure paves the way to synthesize interlayers with specified
characteristics aiming at stable dielectric stacks prepared on Ge.
Figure 1 - (Left) Experimental excitation curves of the 18O(p,α)15N reaction for 9 nm Ge16O2/Ge andGe16Ox 15Ny/Ge samples submitted to 1 atm of 18O2 at 550 °C for 30 min. The excitation curve of a 9nm thick Ge18O2 grown in 18O2 is shown for comparison. Dashed line indicates the energycorresponding to the surface. (Central) Experimental excitation curves of 15N(p,γα)12C reaction of theGe16Ox
15Ny sample obtained before and after thermal treatment in 18O2.
Paper reference:Stabilization of the GeO2/Ge Interface by Nitrogen Incorporation in a One-Step NO ThermalOxynitridation, G. Copetti, G.V. Soares, and C. Radtke, ACS Applied Materials & Interfaces, 8(2016) 27339-27345.
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Laboratório de Implantação Iônica Instituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
Antibacterial properties obtained by low-energy silverimplantation in stainless steel surfaces
Cesar Aguzzoli
The biofilms are a new form of life that offers greater resistance to
microorganisms, protecting them against physical and chemical aggressions of the
surroundings, which facilitate its adaptation in adverse conditions. The development of
pathogenic biofilms on contact surfaces used in the health and food industries is the
main cause of increased contamination that can, eventually, lead to public health
problems and economic order. To prevent, control or eradicate biofilms, technological
alternatives are being developed and tested in materials with antimicrobial properties.
Within this context, this study aimed to evaluate the antimicrobial properties of silver
ions (Ag+) implanted on the surface of austenitic stainless steel AISI 304 by the
technique of ion implantation at low energy (4 keV) in an Ion Plating Diversified (IPD)
equipment. The bacteria studied were Escherichia coli (IBEc 101) and Staphylococcus
aureus (ATCC 6538). The simulations Monte Carlo has predicted for a given energy of
implantation, the dose and depth profile of ions Ag+ implanted in steel. Physico-
chemical analysis presented doses of silver, in the order of magnitude of 1016 atoms/cm2
at depths less than 10 nm. The areal density of silver atoms implanted was influenced
by the relationship between the emission current index and the process time. The
microbiological results obtained showed a significant reduction in bacterial adhesion
(95% for E. coli and 90% for S. aureus) in relation to its controls. However, impurities
such as oxygen found on the surface of samples altered the adhesion of the bacterial
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Laboratório de Implantação IônicaInstituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
cells. The variation of the pH of the culture medium caused the electrostatic repulsion
between bacterial cells and solid surface increases to pH values close to neutrality and
to shrink to no alkaline pH values, interfering in this way, in the adhesion of bacteria.
Missing data yet proving their income and the total cost of the product treated, there is
a huge prospect of making the process IPD on an industrial scale.
Paper reference:Antibacterial properties obtained by low-energy silver implantation in stainless steel surfaces,F.G. Echeverrigaray, S. Echeverrigaray, A.P.L. Delamare, C.H. Wanke, C.A. Figueroa, I.J.R. Baumvol,C. Aguzzoli, Surface & Coatings Technology, 307 (2016) 345-351.
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Laboratório de Implantação Iônica Instituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
Tunnel barriers for graphene spintronic devices
Daniel Lorscheitter Baptista
Graphene is a potential material for spintronic applications because of the
combination of its expected long spin lifetime and high electron mobility.
Experimentally, graphene spin-injection devices can be obtained by fabricating
ferromagnetic metal contacts on graphene; these assemblies act as spin-current filters.
However, previous studies showed that electrical spin injection from such
ferromagnetic electrodes in direct contact (transparent contact) with graphene is not
effective because of the conductance mismatch. Instead, the use of a thin insulating
layer acting as a tunnel barrier (tunneling contact) between the graphene layer and the
metal electrodes has proven to be an e ective solution. Nevertheless, complete controlff
of tunneling barrier fabrication on graphene sheets is still distant. Barrier structural and
chemical non-uniformities seem to play a crucial role in the experimental spin
relaxation time values; these are much shorter than expected (ca. microsecond) from
the low intrinsic spin-orbit couplings of graphene.
In this work, we report a detailed investigation of the structural and chemical
characteristics of thin evaporated Al2O3 barriers with variable thickness grown onto
single-layer graphene sheets. Advanced electron microscopy and spectrum-imaging
techniques were used to investigate the Co/Al2O3/graphene/SiO2 and
Co/graphene/SiO2 interfaces. Direct observation of pinhole contacts was achieved
using FIB cross-sectional lamellas. Spatially resolved EDX spectrum profiles
confirmed the presence of direct point contacts between the Co layer and the graphene.
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Laboratório de Implantação IônicaInstituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
The high surface diffusion properties of graphene led to cluster-like Al2O3 film growth,
limiting the minimal possible thickness for complete barrier coverage onto graphene
surfaces using standard Al evaporation methods. The results indicate a minimum
thickness of nominally 3 nm Al2O3, resulting in a 0.7 rms rough film with a maximum
thickness reaching 5 nm.
1-HAADF-STEM cross-sectional images of samples with 1-nm-thick (nominal) Al2O3 barrier on
SiO2and graphene.
2-SEM image of graphene spintronic device with ferromagnetic tunnel contacts(Co/Al2O3/graphene/SiO2).
Paper reference:On the structural and chemical characteristics of Co/Al2O3/graphene interfaces for graphenespintronic devices, B. Canto, C. Gouvea, B. S. Archanjo, J. E. Schmidt, D. L. Baptista, ScientificReports, 5 (2015) 14332-14339.
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Laboratório de Implantação Iônica Instituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
Investigation of phosphorous in thin films using the31P(α,p)34S
nuclear reaction
Fernanda Chiarello Stedile
Phosphorus detection and quantification were obtained, using the 31P(α,p)34S
nuclear reaction and Rutherford Backscattering Spectrometry, in deposited silicon
oxide films containing phosphorus and in carbon substrates implanted with phosphorus.
It was possible to determine the total amount of phosphorus using the resonance at
3.640 MeV of the 31P(α,p)34S nuclear reaction in samples with phosphorus present in up
to 23 nm depth. Phosphorous amounts as low as 4×1014 cm-2 were detected. Results
obtained by nuclear reaction were in good agreement with those from RBS
measurements. Possible applications of phosphorus deposition routes used in this work
are discussed.
TABLE I - Areal densities of Si, O, and P determined by RBS in phosphorus containing silicon oxidefilms co-deposited (coX, see below) or sequentially deposited (seX, see below) by sputtering yieldingthe mentioned film thickness on carbon substrates and their calculated atomic ratios.
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Laboratório de Implantação IônicaInstituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
Fig.1:a) RBS spectra of silicon oxide films containing 31P deposited by sputtering on C substrates. b)31P(α,p)34S nuclear reaction spectra obtained at 3.640 MeV from the same samples. c) Areal densitiesof 31P obtained by RBS and by nuclear reaction of the indicated samples. Measurement uncertaintiesare around 5% for NRA and 10% for RBS.
Paper reference:Investigation of phosphorous in thin films using the31P(α,p)34S nuclear reaction, E. Pitthan,, A.L.Gobbi, and F.C. Stedile, Nuclear Instruments and Methods in Physics Research Section B: BeamInteractions with Materials and Atoms, 371 (2016) 220-223.
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Laboratório de Implantação Iônica Instituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
Water incorporation in graphene transfered onto SiO2/Siinvestigated by isotopic labeling
Gabriel Vieira Soares
Graphene is the two-dimensional building block for carbon allotropes, exhibiting
fascinating physical properties such as very high carrier mobility and near-ballistic
transport at room temperature. Moreover, the possibility to make very thin channels
will allow continuing the downscaling in field-effect transistors (FETs) channel lengths
and achieve higher device processing speeds. Owing to these characteristics, graphene
is considered one of the most promising contenders for future nanoelectronic devices.
The implementation of graphene in semiconductor technology will only be possible
through a large-scale fabrication approach. Chemical vapor deposition (CVD) of
single-layer graphene (SLG) on catalytic metal surfaces is a well-established method to
fulfill this purpose. However, SLG prepared by CVD needs to be transferred onto a
nonmetallic substrate, aiming at device fabrication. Processing and modification of
graphene properties for technological purposes are also challenging. In particular, the
adsorption of different species in SLG/SiO2/Si structures is of central importance.
Understanding these processes is necessary in order to meet the physical requirements
for industrial applications of graphene. In this way we systematically investigated the
incorporation of H and O in SLG transferred onto SiO2/Si substrates, upon annealing in
water vapor. In order to quantify the incorporation of these elements specifically related
to the annealing step, we used water simultaneously enriched in H (deuterium, D) and
18O rare isotopes. Nuclear reaction analysis (NRA) enables quantification of these rare
isotopes. Figure 1 shows the 18O and D amounts uptake in graphene. The ratio
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Laboratório de Implantação IônicaInstituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
between 18O and D concentrations in the 100-300°C range is approximately constant,
which points to a common mechanism operating at these temperatures. Physisorption
of H2O molecules in the SLG/SiO2/Si structure is the dominant process in the 100-
300°C temperature range. For 400 °C and above, chemisorption is favored due to the
creation of defects in the graphene lattice. Transport measurements demonstrated that
the observed physico-chemical and structural modifications have a huge impact on the
electrical characteristics of these structures.
Figure 1: 18O (solid circles) and D (open circles) areal densities incorporated in graphene as afunction of annealing temperature.
Paper reference:Water incorporation in graphene transfered onto SiO2/Si investigated by isotopic labeling ,N.M. Bom, G.V.Soares, M.H.O. Junior, J.M.J. Lopes, H. Riechert, C. Radtke. The Journal of PhysicalChemistry C, 120 (2016) 201-206.
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Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
SiC surface barrier detector for RBS spectroscopy
Henri Boudinov
Silicon carbide (SiC) is a semiconductor with wide bandgap (3.27 eV), high
thermal conductivity (4.9 W.cm-1.K-1), high-breakdown field strength (4 MV.cm-1), high
electron saturated drift velocity (2x107 cm.s-1) and high threshold displacement energy
(22-35 eV). These properties make SiC suitable to be used as a particle detector,
especially involving high-temperature experiments, high radiation background and hot
environments.
Epitaxial SiC device have been tested as detector for Rutherford Backscattering
Spectroscopy (RBS). The device was fabricated on a commercial 4H–SiC epitaxial n-
type layer grown onto a 4H–SiC n+ type substrate wafer doped with nitrogen.
Aluminum oxide with a thickness of 1 nm was deposited by Atomic Layer Deposition
and 10 nm of Ni were deposited by sputtering to form the Ni/Al2O3/SiC MIS Schottky
structure. Variable temperature Current-Voltage curves were used to extract the values
of real Schottky Barrier Height and ideality factor (0.61 eV and 1.19, respectively).
Current-Voltage and Capacitance-Voltage characteristics were measured and compared
with the curves of a commercial Si barrier detector from ORTEC. Before starting the
RBS experiment, it is important to estimate that the alpha collection occurs within the
epitaxial layer depth, which in the fabricated SiC detector was 6 m. SRIM simulations
were performed, considering He++ particles colliding perpendicularly with the surface of
the fabricated SiC structure. For the energy of 2 MeV, a projected ion range of 4.73 m
was inferred. The ion range will exceed the epitaxial layer depth if He++ particles have
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Ion Implantation Laboratory Institute of Physics – UFRGS
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energy above 2.4 MeV. Therefore, the RBS experiment was performed using alpha
energies of 1, 1.5 and 2 MeV. This setup ensures that all alpha particles deposit the total
energy within the epitaxial layer. RBS data were collected from an Au/Si sample using
the fabricated and the commercial detectors simultaneously. The energy resolution for
the fabricated detector was estimated to be 76 keV. This energy resolution value is in
accordance to other SiC detectors presented in the literature and is poorer than the
common Si RBS detectors, but its major advantage relies in the fact that SiC structures
can be used in high radiation doses or high temperature ambient without varying its
physical and chemical properties.
Figure 1: a) Cross-section view of the fabricated Ni/(1 nm)Al2O3/SiC Schottkystructure. b) RBS spectra collected by the fabricated 4H-SiC detector from the Au/Sisample for 1 MeV, 1.5 MeV and 2 MeV He++ beam energies. The points are theexperimental spectra and the lines are the simulated by SIMNRA correspondingspectra.
Paper reference:Ni/Al2O3/4H-SiC structure for He++ energy detection in RBS experiments, I.R. Kaufmann, A.Pick, M.B. Pereira, H. Boudinov Journal of Instrumentation, 11 (2016) P10013-1-P10013-6.
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Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
Fabrication and Characterization of Microstructures Through
Ion Microprobe Techniques
Johnny Ferraz Dias
In this work we explore the capabilities of energetic focused beams of light ions
for the fabrication and analysis of microstructures produced on 12 μm thick
polyethylene terephthalate (PET) foils. To that end, single lines and multi-structure
patterns were drawn directly on the foils using Proton Beam Writing (PBW) techniques
followed by chemical etching.
The first step in this research project consisted in the evaluation of the influence
of ion fluence and of the etching time on the development of microstructures produced
by 2.2 MeV H+. Several lines of 1 x 100 pixels corresponding to approximately 2.5 x
101.5 µm2 were patterned using different ion fluences (from 1012 to 1017 H+/cm2) and
etching times (from 1 to 60 minutes). We observe the presence of three different
behaviors according to the ion fluence. Long etching times are necessary to open the
structure in the low fluence regime, while moderate fluences require shorter etching
times. In the high fluence regime, a more complex scenario emerges where short
etching times leads to structures either fully or partially developed.
The characterization of the microstructures was carried out with on-axis Scanning
Transmission Microscopy (STIM) employing H1+, He2+ and Li3+ ions in the MeV range.
Scanning Electron Microscopy (SEM) was employed as well. The results show that a
polymer like PET can be patterned trough a proper combination of irradiation
parameters and etching times. However, aspect ratios obtained in this way are quite
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Ion Implantation Laboratory Institute of Physics – UFRGS
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poor. Moreover, STIM images obtained from different regions of the ion energy spectra
reveal patterns and cavities not seen neither by conventional STIM where the whole
energy spectrum is used nor by SEM. Moreover, striking differences are observed when
different ions are used for STIM analysis. The results suggest that heavier ions provide
additional information of the structures under analysis when compared with usual
STIM employing protons.
Figure 1 depicts energy loss spectra and respective on-axis STIM maps generated
by H+ (panels A, B, C and D), He2+ (panels E, F, G and H) and Li3+ (panels I, J, K and
L). The step-like structure was fabricated through PWB with fluences of 6x1014 and
3x1013 ions/cm2 for the inner and outer squares respectively. The sizes of the inner and
outer squares were approximately 30 x 30 µm2 and 75 x 75 µm2 respectively. The
etching time was 3 minutes. The letters on each panel stand for the respective particle
energy loss region used to generate the maps.
Figure 1
Paper reference:Fabrication and analysis of polymer microstructures through ion microprobe techniques, E.M.Stori, C.T. Souza, J.F.Dias, Journal of Applied Polymer Science, 43253 (2016) 1-10.
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Ion Implantation Laboratory Institute of Physics – UFRGS
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Correlating charge transfer effects with the chemical reactivityof PdCu nanoalloys
Jonder Morais
In this work we report on the synthesis and characterization of PdxCu1-x (x = 0.7,
0.5 and 0.3) nanoalloys obtained via an eco-friendly chemical reduction method based
on ascorbic acid and trisodium citrate. The average size of the quasi-spherical
nanoparticles (NPs) obtained by this method was about 4 nm, as observed by TEM. The
colloids containing the different NPs were then supported on carbon in order to produce
powder samples (PdxCu1-x/C) whose electronic and structural properties were probed by
different techniques. XRD analysis indicated the formation of crystalline PdCu alloys
with nanoscaled crystallite size. Core-level XPS results provided a fingerprint of a
charge transfer process between Pd and Cu and its dependency on the nanoalloy
composition. Additionally, it was verified that the alloying is able to change the NPs
reactivity towards oxidation and reduction. Indeed, the higher the amount of Pd in the
nanoalloy, less oxidized are both the Pd and the Cu atoms in the as-prepared samples.
Also, in situ XANES experiments during thermal treatment under reducing atmosphere,
showed that the temperature required for a complete reduction of the nanoalloys
depends on their composition. These results envisage the control at the atomic level in
order to tune novel catalytic properties of such nanoalloys.
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Laboratório de Implantação IônicaInstituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
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Representative scheme of the correlation between the partial charge transfer (observed by XPS) andthe CO reactivity (probed by in situ XANES) for the inbvestigated Pd-Cu nanoalloys. It was observedthat the higher the amount of Pd, greater the reactivity of the samples to the reduction by CO, and thehigher is their resistance to oxidation.
Paper reference:Charge transfer effects in the chemical reactivity of PdxCu1-x nanoalloys, M. V. Castegnaro, A.
Gorgeski, B. Balke, M.C.M. Alves and J. Morais, Nanoscale, volume 8 (2016) 641-647.
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Ion Implantation Laboratory Institute of Physics – UFRGS
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Blood trace element concentrations in Polycystic
Ovary Syndrome: systematic review and meta-analysis
Livio Amaral
Polycystic ovary syndrome (PCOS) is a prevalent condition in women of
reproductive age. PCOS is characterized by androgen excess and chronic anovulation
and associated with low-grade inflammation and metabolic comorbidities. Some trace
elements have been linked to pathophysiological mechanisms of oxidative stress and
inflammation in different disorders. Therefore, we conducted a systematic review and
meta-analysis of the available evidence regarding trace element concentrations in
PCOS. We reviewed MEDLINE and EMBASE in search of case-control, cross-
sectional, and cohort studies published until September 2015. Of 183 studies identified,
six were selected for systematic review. All used the Rotterdam criteria for the
diagnosis of PCOS. Two studies evaluating chromium and one assessing cobalt levels
did not observe differences between PCOS and controls. Another study recorded
similar nickel and vanadium levels between the groups, but lower selenium
concentrations in women with PCOS compared to controls. Four studies were included
in the random effects model meta-analysis, for a total of 264 PCOS and 151 control
women. Copper levels were found to be higher in women with PCOS than in controls
[mean difference 0.12 ppm (95% CI 0.07; 0.17 ppm); I2=0%]. Manganese [mean
difference 0.04 ppm (95% CI −0.05; 0.13 ppm); I2 = 94.4%] and zinc concentrations
[mean difference 0.02 ppm (95 % CI −0.12; 0.16 ppm); I2= 92.4 %] were similar
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Laboratório de Implantação IônicaInstituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
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between the groups. The present results suggest a relationship between increased
copper concentration and PCOS.
Paper reference:
Blood Trace Element Concentrations in Polycystic Ovary Syndrome: Systematic Review and
Meta-analysis, P.M. Spritzer, S.B. Lecke, V.C. Fabris, P.K. Ziegelmann, L. Amaral. Biological Trace
Element Research, 172 (2016) 104-113.
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Laboratório de Implantação Iônica Instituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
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Report
Enhanced Zn infiltration in porous silicon by using theIsothermal Close Space Sublimation method
Moni Behar
Isothermal Close Space Sublimation technique was used for embedding porous
silicon (PS) films with ZnTe. It was studied the influence of the preparation conditions
like: the chemical etching step before the ZnTe growth and the final porosity of the
ZnTe embebbed PS. The resulting structure was studied by means of the X-ray
diffraction, scanning electron spectroscopy (SEM) Rutherford bsckscattering
spectroscopy (RBS), and Energy Dispersive spectroscopy ( EDS). The combinatiom of
the above mentioned techniques allow us to determine among others the composition
profiles of the heterostructure. We conclude that the etching of the PS before the ZnTe
growth has two main effects: the increase of the porosity and enhancing the reactivity
of the inner surface. It was observed that both effects benefit the filling process of the
pores. We explored the evolution of the porosity by using the reflectance technique.
The atomic porcent determined by this last technique is in quite good agreement with
RBS and EDS results. The present work show the feasibility of the ICSS technique in
order produce solar cells like the one based on the CdTe/Zn hetero structure which is on
the way.
Paper reference:Enhanced ZnTe Infiltration in porous silicon by Isothermal Close Space Sublimation, C.C. deMelo, S. Larramendi V. Torres-Costa, J. Santoyo Salazar, M. Behar, J.F. Dias, Micropouros andMesopouros Materials, 188 (2014) 93-98.
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Laboratório de Implantação IônicaInstituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
Damage accumulation in MgO irradiated with MeV Au ions atelevated temperatures
Moni Behar
The damage accumulation process in MgO single crystals under medium energy,
heavy ion irradiation (1.2 MeV, Au) at a fluences up to 4 × 1014 cm-2 has been studied at
573, 773 and 1073 K. The disorder depth profiles were determined through the use of
the Channeling Rutherford Backscattering technique (RBS/C). The analysis of the
RBS/C data reveals two steps in the MgO damage process, irrespective of the
temperature. However it was found that for increasing irradiation temperature, the
damage level decreases and the fluence at which second step occurs the damage
increases. A shift of the damage peak at increasing fluence is observed for the three
temperatures. These results can be explained by an enhanced defect mobility which
facilitates defect migration and may favor defect annealing, X-ray observations are in
agreement with the RBS/C results.
Paper reference:Damage accumulation in MgO irradiated with MeV Au ions at elevated temperatures, D.Bachiller-Perea, A. Debelle, L. Thome and M. Behar, Journal of Nuclear Materials,478 (2016) 268-274.
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Ion Implantation Laboratory Institute of Physics – UFRGS
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Biennial
Report
In-situ transmission electron microscopy growth ofnanoparticles under extreme conditions
Paulo F. P. Fichtner
The formation and time resolved behavior of individual Pb nanoparticles
embedded in silica have been studied by in-situ transmission electron microscopy
observations at high temperatures (400–1100C) and under 200 keV electron
irradiation. It is shown that under such extreme conditions, nanoparticles can migrate at
long distances presenting a Brownian like behavior and eventually coalesce. The
particle migration phenomenon is discussed considering the influence of the thermal
energy and the electron irradiation effects on the atomic diffusion process which is
shown to control particle migration. These results and comparison with ex-situ
experiments tackle the stability and the microstructure evolution of nanoparticles
systems under extreme conditions. It elucidates on the effects of energetic particle
irradiation-annealing treatments either as a tool or as a detrimental issue that could
hamper their long-term applications in radiation-harsh environments such as in space or
nuclear sectors.
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Ion Implantation Laboratory Institute of Physics – UFRGS
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Figures on left-side: In-situ evolution of the aged sample implanted at 5 % 1015 ions cm -2. (a)
Instantaneous micrograph obtained during in-situ 600 oC thermal annealing of the aged sampleshowing the presence of Pb NPs at SiO2/Si interface. (b) Irradiation effect of the TEM electron beam
(e-beam) combined with 1100 oC in-situ thermal annealing. Image extracted from the in-situ movie.(Multimedia view) [URL: http://dx.doi.org/10.1063/1.4940158.1].
Figures on right-side: Sequence of micrographs from the same sample region obtained during in-situ
1100 oC TEM thermal annealing after (a) 34 and (b) 42 min of high temperature treatment. (c)Particle diffusivity coefficient Dp as a function of NP radius. The data points were experimentally
obtained from the video recorded during 1100 oC in-situ thermal annealing and are consistently fitted
by Dp=br-4 (b=124) suggesting that particle growth is governed by migration and coalescenceprocesses mainly controlled by surface diffusion mechanisms. (Multimedia view) [URL:http://dx.doi.org/10.1063/1.4940158.3].
Paper reference:In-situ transmission electron microscopy growth of nanoparticles under extreme conditions, F.P.Luce, E. Oliviero, G. de M. Azevedo, D.L. Baptista, F. C. Zawislak and P.F.P. Fichtner, Journal ofApplied Physics, 119 (2016) 035901:1-6.
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Ion Implantation Laboratory Institute of Physics – UFRGS
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Biennial
Report
Alternative treatment for the energy-transfer and transportcross section in dressed electron-ion binary collisions
Pedro Luis Grande
A formula for determining the electronic stopping power and the transport cross
section in electron-ion binary collisions is derived from the induced density for
spherically symmetric potentials using the partial-wave expansion. In contrast to the
previous one found in many textbooks, the present formula converges to the Bethe and
Bloch stopping-power formulas at high ion velocities and agrees rather well with
experimental stopping-power data, as shown here for Al, C, and H2O targets. It can be
employed in plasma physics and particularly in any application that requires electronic
stopping-power values of quasifree electrons with high accuracy.
The energy transfer between electrons and ions in plasmas and the corresponding
momentum-transfer rate have been investigated using the concept of the transport cross
section σtr . It is a fundamental quantity used in different fields (e.g., atomic and plasma
physics) and in particular it is directly related to the electronic stopping power of
charged particles, which is important for a wide range of applications stretching
including ion-beam analysis, materials modifications, and ion-driven fast ignition in
plasmas. Moreover, its most appealing application is dosimetry for cancer treatment
using ions, because of the increasing worldwide use of protons and heavier ions in
radiation therapy. Here an alternative formula for the transport cross section used for
stopping-power calculations and energy-transfer rates in electron-ion binary collisions
is reported for spherically symmetric electron-ion potentials.
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Laboratório de Implantação IônicaInstituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
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Stopping force dE/dz as a function of energy for H+ ions in an electron gas with electron radius rs =
2.07. The thin black solid line corresponds to calculations using the standard transport cross section
The thick red solid line corresponds to equation on the let. For comparison, the Bethe and Bloch
formulas are also shown with dashed and dot-dashed lines, respectively.
Paper reference:Alternative treatment for the energy-transfer and transport cross section in dressed electron-ionbinary collisions, P.L. Grande, Physical Review A, 94 (2016) 042704-1.
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Laboratório de Implantação Iônica Instituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
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Report
Neutralization and wake effects on the Coulomb explosion ofswift H2
+ ions traversing thin films
Pedro Luis Grande
The Coulomb explosion of small cluster beams can be used to measure the dwell
time of fragments traversing amorphous films. Therefore, the thickness of thin films
can be obtainedwith the so-called Coulomb depth profiling technique using relatively
high cluster energies where the fragments are fully ionized after breakup. Here we
demonstrate the applicability of Coulomb depth profiling technique at lower cluster
energies where neutralization and wake effects come into play. To that end, we
investigated 50–200 keV/u H2+ molecular ions impinging on a 10 nm TiO2 film and
measured the energy of the backscattered H+ fragments with high-energy resolution.The
effect of the neutralization of the H+ fragments along the incoming trajectory before the
backscattering collision is clearly observed at lower energies through the decrease of
the energy broadening due to the Coulomb explosion. The reduced values of the
Coulomb explosion combined with full Monte Carlo simulations provide compatible
results with those obtained at higher cluster energies where neutralization is less
important. The results are corroborated by electron microscopy measurements.
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Laboratório de Implantação IônicaInstituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
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1- 2D MEIS spectrum measured with 175 keV/u of H2+ projectiles under normal incidence on the
TiO2 layer grown over crystal Si. The following signals are observed from top to bottom: Tifrom the TiO2 film; Si from the substrate; O from TiO2 and SiO2 films; and C stemming fromcontamination. Blocking lines in Si are also visible.
2- (a) High-resolution TEM image of the TiO2 film using phase contrast. (b) Scanningtransmission electron microscope (STEM) image of the same sample. In (b) no differencecould be observed between the contributions of TiO2 and SiO2, present as a native oxide.
Paper reference:Neutralization and wake effects on the Coulomb explosion of swift H2
+ ions traversing thin films,L.F.S Rosa, P.L. Grande, J.F. Dias, R.C. Fadanelli, M. Vos, Physical Review A, 91 (2015) 042704-1.
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Laboratório de Implantação Iônica Instituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
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Biennial
Report
Energy loss function of solids assessed by ion beam energy lossmeasurements: practical application to Ta2O5
Raul Carlos Fadanelli
We present a study where the energy loss function of Ta2O5, initially derived in
the optical limit for a limited region of excitation energies from reflection electron
energy loss spectroscopy (REELS) measurements, was improved and extended to the
whole momentum and energy excitation region through a suitable theoretical analysis
using the Mermin dielectric function and requiring the fulfillment of physically
motivated restrictions, such as the f- and KK- sum rules. The stopping cross section
(SCS) and the energy loss straggling measured for 300-2000 keV proton and 200-6000
keV helium ion beams by means of Rutherford backscattering spectrometry (RBS)
were compared to the same quantities calculated in the dielectric framework, showing
an excellent agreement, which is used to judge the reliability of the Ta2O5 energy loss
function.
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Laboratório de Implantação IônicaInstituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
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Energy loss function as a function of the transferred energy (left), SCS as a function of the H (top) orHe (bottom) energy (center) and straggling as a function of H (top) and He (bottom) energy.
Paper reference:Energy loss function of solids assessed by ion beam energy loss measurements: practicalapplications to Ta2O5, R.C. Fadanelli, M. Behar, L.C.C.M. Nagamine, M. Vos, N.R. Arista, C.D.Nascimento, R. Garcia-Molina and I. Abril, J. Phys. Chem. C, 119 (2015) 20561-20570.
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Laboratório de Implantação Iônica Instituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
Confinement effects of ion tracks in ultrathin polymer films
Ricardo Meurer Papaléo
In the past 30 years, basic physico-chemical changes observed in polymers
irradiated by energetic ions have been thoroughly investigated for a multitude of
polymeric systems and irradiation conditions. However, very little has been reported on
nanoscale polymer systems and, in particular, on studies aiming a direct comparison of
the magnitude of radiation effects under bulk and confinement conditions. In this paper
we present recent results on polymer thin and ultrathin films, used as a model system to
investigate confinement effects of ion tracks in one dimension. We followed the
changes in radiation effects at the surface as the thickness is systematically reduced
from ~ 100 nm down to ~2nm. Experiments were performed for ions in an energy
range from 600 MeV up to 2 GeV one involving individual ions. As shown in Fig. 1,
surface effects, such as nanocavities and protrusions produced by swift heavy ions
(associated to mass transport and particle ejection) are weakened when the length of the
ion track is spatially confined. The deviation from bulk-like behavior starts at a critical
thickness as large as 40nm in PMMA. We argue that the confinement effects seen here
arise essentially due to the decrease of the number of point sources of excitation energy
in shorter track lengths. Effects that strongly depend on the cooperative action of
energy sources along the track (as rim formation in PMMA) are suppressed first,
resulting in large critical lengths. We also provide strong evidence for the importance of
momentum transfer, which limits the depth of origin of ejected particles to a maximum
of h/2, even at the very thin layers and large dE/dx used.
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Laboratório de Implantação IônicaInstituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
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Fig. 1 SFM images of PMMA thin films of different thicknesses bombarded by (a-e) 923-MeV Pb eq+
ions at normal incidence, and by (f-j) 2.2-GeV Aueq+ ions at grazing incidence. The thickness of thelayer is given in each image. The scale bar of 100 nm is for images (a) to (e); the 200 nm bar is forimages (f) to (j). The height scale given in (f) is valid for all images, except in (e)
Paper reference:Confinement Effects of Ion Tracks in ultrathin Polymer Films, R.M. Papaléo, R. Thomaz, L. I.Gutierres, V. M. de Menezes, D. Severin, C. Trautmann, D. Tramontina, E, M. Bringa, and P. L.Grande, Phys. Rev. Lett.,, 114 (2015) 118302- 1-5.
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Publications in peer reviewed journals
[1] I. Alencar et al., “Irradiation effects in CaF 2 probed by Raman scattering,” J.
Raman Spectrosc., vol. 47, no. 8, pp. 978–983, Aug. 2016.
[2] B. S. Archanjo et al., “Nanoscale mapping of carbon oxidation in pyrogenic black
carbon from ancient Amazonian anthrosols,” Environ. Sci. Process. Impacts, vol.
17, no. 4, pp. 775–779, 2015.
[3] A. W. Arins et al., “Correlation between tetragonal zinc-blende structure and
magnetocrystalline anisotropy of MnGa epilayers on GaAs(111),” J. Magn.
Magn. Mater., vol. 381, pp. 83–88, May 2015.
[4] T. S. Avila, P. F. P. Fichtner, A. Hentz, and P. L. Grande, “On the use of MEIS
cartography for the determination of Si1–xGex thin-film strain,” Thin Solid
Films, vol. 611, pp. 101–106, Jul. 2016.
[5] D. Bachiller-Perea, A. Debelle, L. Thomé, and M. Behar, “Damage accumulation
in MgO irradiated with MeV Au ions at elevated temperatures,” J. Nucl. Mater.,
vol. 478, pp. 268–274, Sep. 2016.
[6] N. M. Bom, G. V. Soares, S. Hartmann, A. Bordin, and C. Radtke, “GeO2/Ge
structure submitted to annealing in deuterium: Incorporation pathways and
associated oxide modifications,” Appl. Phys. Lett., vol. 105, no. 14, p. 141605,
Oct. 2014.
[7] N. M. Bom, M. H. Oliveira, G. V. Soares, C. Radtke, J. M. J. Lopes, and H.
Riechert, “Synergistic effect of H2O and O2 on the decoupling of epitaxial
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Laboratório de Implantação IônicaInstituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
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monolayer graphene from SiC(0001) via thermal treatments,” Carbon N. Y., vol.
78, pp. 298–304, Nov. 2014.
[8] N. M. Bom, G. V. Soares, M. H. de Oliveira Junior, J. M. J. Lopes, H. Riechert,
and C. Radtke, “Water Incorporation in Graphene Transferred onto SiO 2 /Si
Investigated by Isotopic Labeling,” J. Phys. Chem. C, vol. 120, no. 1, pp. 201–
206, Jan. 2016.
[9] B. Canto, C. P. Gouvea, B. S. Archanjo, J. E. Schmidt, and D. L. Baptista, “On
the Structural and Chemical Characteristics of Co/Al2O3/graphene Interfaces for
Graphene Spintronic Devices,” Sci. Rep., vol. 5, p. 14332, Sep. 2015.
[10] L. N. Carli, T. S. Daitx, G. V. Soares, J. S. Crespo, and R. S. Mauler, “The effects
of silane coupling agents on the properties of PHBV/halloysite nanocomposites,”
Appl. Clay Sci., vol. 87, pp. 311–319, Jan. 2014.
[11] L. S. Casarin et al., “Effect of Plasma Nitriding Surface Modification on the
Adhesion of Food Pathogens to Stainless Steel AISI 316 and AISI 304,” J. Food
Saf., vol. 36, no. 3, pp. 341–347, Aug. 2016.
[12] M. V. Castegnaro, A. Gorgeski, B. Balke, M. C. M. Alves, and J. Morais, “Charge
transfer effects on the chemical reactivity of Pd x Cu 1−x nanoalloys,” Nanoscale,
vol. 8, no. 1, pp. 641–647, 2016.
[13] G. Copetti, G. V. Soares, and C. Radtke, “Stabilization of the GeO 2 /Ge Interface
by Nitrogen Incorporation in a One-Step NO Thermal Oxynitridation,” ACS Appl.
Mater. Interfaces, vol. 8, no. 40, pp. 27339–27345, Oct. 2016.
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Ion Implantation Laboratory Institute of Physics – UFRGS
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[14] N. B. D. da Costa et al., “Tungsten oxide thin films obtained by anodisation in
low electrolyte concentration,” Thin Solid Films, vol. 578, pp. 124–132, Mar.
2015.
[15] A. F. da Silva, A. Levine, Z. S. Momtaz, H. Boudinov, and B. E. Sernelius,
“Magnetoresistance of doped silicon,” Phys. Rev. B, vol. 91, no. 21, p. 214414,
Jun. 2015.
[16] N. Dal’Acqua et al., “Characterization and Application of Nanostructured Films
Containing Au and TiO 2 Nanoparticles Supported in Bacterial Cellulose,” J.
Phys. Chem. C, vol. 119, no. 1, pp. 340–349, Jan. 2015.
[17] N. Dam Madsen et al., “Titanium Nitride as a Strain Gauge Material,” J.
Microelectromechanical Syst., vol. 25, no. 4, pp. 683–690, Aug. 2016.
[18] Y. A. Danilov et al., “Formation of the single-phase ferromagnetic semiconductor
(Ga,Mn)As by pulsed laser annealing,” Phys. Solid State, vol. 58, no. 11, pp.
2218–2222, Nov. 2016.
[19] C. de Melo et al., “Infiltration of ZnO in Mesoporous Silicon by Isothermal Zn
Annealing and Oxidation,” ECS J. Solid State Sci. Technol., vol. 5, no. 2, pp. P6–
P11, Nov. 2016.
[20] O. de Melo et al., “Graded composition CdxZn1−xTe films grown by Isothermal
Close Space Sublimation technique,” Sol. Energy Mater. Sol. Cells, vol. 138, pp.
17–21, Jul. 2015.
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[21] C. T. de Souza, E. M. Stori, L. A. Boufleur, R. M. Papaléo, and J. F. Dias, “The
effect of local fluence on the micropatterning of poly(ethylene terephthalate) foils
through proton beam writing,” Appl. Phys. A, vol. 122, no. 7, p. 690, Jul. 2016.
[22] M. R. de Souza et al., “Evaluation of the genotoxic potential of soil contaminated
with mineral coal tailings on snail Helix aspersa,” Chemosphere, vol. 139, pp.
512–517, Nov. 2015.
[23] A. Duarte et al., “Elemental quantification of large gunshot residues,” Nucl.
Instruments Methods Phys. Res. Sect. B Beam Interact. with Mater. Atoms, vol.
348, pp. 170–173, Apr. 2015.
[24] F. G. Echeverrigaray et al., “Antibacterial properties obtained by low-energy
silver implantation in stainless steel surfaces,” Surf. Coatings Technol., vol. 307,
pp. 345–351, Dec. 2016.
[25] Y. Enamorado-Horrutiner, M. E. Villanueva-Tagle, M. Behar, G. Rodríguez-
Fuentes, J. Ferraz Dias, and M. S. Pomares-Alfonso, “Cuban zeolite for lead
sorption: application for water decontamination and metal quantification in water
using nondestructive techniques,” Int. J. Environ. Sci. Technol., vol. 13, no. 5, pp.
1245–1256, May 2016.
[26] R. C. Fadanelli et al., “Energy Loss Function of Solids Assessed by Ion Beam
Energy-Loss Measurements: Practical Application to Ta 2 O 5,” J. Phys. Chem. C,
vol. 119, no. 35, pp. 20561–20570, Sep. 2015.
[27] R. C. Fadanelli et al., “Stopping and straggling of H and He in ZnO,” Eur. Phys.
J. D, vol. 70, no. 9, p. 178, Sep. 2016.
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[28] A. L. Fernandes Cauduro et al., “Tuning the optoelectronic properties of
amorphous MoOx films by reactive sputtering,” Appl. Phys. Lett., vol. 106, no.
20, p. 202101, May 2015.
[29] J. A. Fernandes et al., “Synergizing nanocomposites of CdSe/TiO 2 nanotubes for
improved photoelectrochemical activity via thermal treatment,” Dalt. Trans., vol.
45, no. 24, pp. 9925–9931, 2016.
[30] J. A. Fernandes et al., “TiO2 nanotubes sensitized with CdSe via RF magnetron
sputtering for photoelectrochemical applications under visible light irradiation,”
Phys. Chem. Chem. Phys., vol. 16, no. 19, p. 9148, 2014.
[31] N. Figueiredo-Prestes et al., “Stabilization of perpendicular magnetic anisotropy
in CeO 2 films deposited on Co/Pt multilayers,” RSC Adv., vol. 6, no. 62, pp.
56785–56789, 2016.
[32] P. L. Grande, “Alternative treatment for the energy-transfer and transport cross
section in dressed electron-ion binary collisions,” Phys. Rev. A, vol. 94, no. 4, p.
42704, Oct. 2016.
[33] E. Guziewicz et al., “XRD and RBS studies of quasi-amorphous zinc oxide layers
produced by Atomic Layer Deposition,” Thin Solid Films, vol. 612, pp. 337–341,
Aug. 2016.
[34] A. L. Hilario Garcia et al., “Genotoxicity induced by water and sediment samples
from a river under the influence of brewery effluent,” Chemosphere, vol. 169, pp.
239–248, Feb. 2017.
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Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
[35] V. F. S. Kahl et al., “Telomere measurement in individuals occupationally
exposed to pesticide mixtures in tobacco fields,” Environ. Mol. Mutagen., vol. 57,
no. 1, pp. 74–84, Jan. 2016.
[36] I. R. Kaufmann, A. Pick, M. B. Pereira, and H. I. Boudinov, “Ni/Al 2 O 3 /4H-
SiC structure for He ++ energy detection in RBS experiments,” J. Instrum., vol.
11, no. 10, pp. P10013–P10013, Oct. 2016.
[37] I. R. Kaufmann, M. B. Pereira, and H. I. Boudinov, “Schottky barrier height of
Ni/TiO 2 /4H-SiC metal-insulator-semiconductor diodes,” Semicond. Sci.
Technol., vol. 30, no. 12, p. 125002, Dec. 2015.
[38] S. Khan et al., “Effect of Oxygen Content on the Photoelectrochemical Activity
of Crystallographically Preferred Oriented Porous Ta 3 N 5 Nanotubes,” J. Phys.
Chem. C, vol. 119, no. 34, pp. 19906–19914, Aug. 2015.
[39] E. Leal da Silva et al., “Influence of the support on PtSn electrocatalysts
behavior: Ethanol electro-oxidation performance and in-situ ATR-FTIRS studies,”
Appl. Catal. B Environ., vol. 193, pp. 170–179, Sep. 2016.
[40] F. P. Luce, E. Oliviero, G. de M. Azevedo, D. L. Baptista, F. C. Zawislak, and P.
F. P. Fichtner, “In-situ transmission electron microscopy growth of nanoparticles
under extreme conditions,” J. Appl. Phys., vol. 119, no. 3, p. 35901, Jan. 2016.
[41] L. P. Matte et al., “Influence of the CeO 2 Support on the Reduction Properties of
Cu/CeO 2 and Ni/CeO 2 Nanoparticles,” J. Phys. Chem. C, vol. 119, no. 47, pp.
26459–26470, Nov. 2015.
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[42] A. E. P. Mattos et al., “Photoluminescence Emission from Si Nanocrystals in
SiO2 Matrix Obtained by Reactive Sputtering,” Adv. Sci. Eng. Med., vol. 6, no. 3,
pp. 277–282, Mar. 2014.
[43] L. P. R. Moraes et al., “Synthesis and performance of palladium-based
electrocatalysts in alkaline direct ethanol fuel cell,” Int. J. Hydrogen Energy, vol.
41, no. 15, pp. 6457–6468, Apr. 2016.
[44] C. D. Nascimento, R. C. Fadanelli, and M. Behar, “The influence of the mean
charge state on the Coulomb heating of fast diclusters through the Si〈 111〉direction,” Nucl. Instruments Methods Phys. Res. Sect. B Beam Interact. with
Mater. Atoms, vol. 372, pp. 86–90, Apr. 2016.
[45] L. A. B. Niekraszewicz, C. T. de Souza, E. M. Stori, P. F. C. Jobim, L. Amaral,
and J. F. Dias, “The role of micro-NRA and micro-PIXE in carbon mapping of
organic tissues,” Nucl. Instruments Methods Phys. Res. Sect. B Beam Interact.
with Mater. Atoms, vol. 348, pp. 160–164, Apr. 2015.
[46] R. M. Papaléo et al., “Confinement Effects of Ion Tracks in Ultrathin Polymer
Films,” Phys. Rev. Lett., vol. 114, no. 11, p. 118302, Mar. 2015.
[47] E. Pitthan, S. A. Corrêa, G. V. Soares, H. I. Boudinov, and F. C. Stedile,
“SiO2/SiC structures annealed in D218O: Compositional and electrical effects,”
Appl. Phys. Lett., vol. 104, no. 11, p. 111904, Mar. 2014.
[48] E. Pitthan, R. dos Reis, S. A. Corrêa, D. Schmeisser, H. I. Boudinov, and F. C.
Stedile, “Influence of CO annealing in metal-oxide-semiconductor capacitors
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with SiO2 films thermally grown on Si and on SiC,” J. Appl. Phys., vol. 119, no.
2, p. 25307, Jan. 2016.
[49] E. Pitthan, A. L. Gobbi, H. I. Boudinov, and F. C. Stedile, “SiC Nitridation by
NH3 Annealing and Its Effects in MOS Capacitors with Deposited SiO2 Films,”
J. Electron. Mater., vol. 44, no. 8, pp. 2823–2828, Aug. 2015.
[50] E. Pitthan, A. L. Gobbi, and F. C. Stedile, “Investigation of phosphorous in thin
films using the 31P(α,p)34S nuclear reaction,” Nucl. Instruments Methods Phys.
Res. Sect. B Beam Interact. with Mater. Atoms, vol. 371, pp. 220–223, Mar. 2016.
[51] S. M. M. Ramos, J. F. Dias, and B. Canut, “Drop evaporation on
superhydrophobic PTFE surfaces driven by contact line dynamics,” J. Colloid
Interface Sci., vol. 440, pp. 133–139, Feb. 2015.
[52] G. K. Rolim, A. Gobbi, G. V. Soares, and C. Radtke, “Oxygen Transport and
Incorporation in Pt/HfO 2 Stacks Deposited on Germanium and Silicon,” J. Phys.
Chem. C, vol. 119, no. 8, pp. 4079–4084, Feb. 2015.
[53] L. F. S. Rosa, P. L. Grande, J. F. Dias, R. C. Fadanelli, and M. Vos,
“Neutralization and wake effects on the Coulomb explosion of swift H2+ ions
traversing thin films,” Phys. Rev. A, vol. 91, no. 4, p. 42704, Apr. 2015.
[54] M. J. Sampaio, M. J. Lima, D. L. Baptista, A. M. T. Silva, C. G. Silva, and J. L.
Faria, “Ag-loaded ZnO materials for photocatalytic water treatment,” Chem. Eng.
J., May 2016.
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Report
[55] M. J. Sampaio et al., “Photocatalytic performance of Au/ZnO nanocatalysts for
hydrogen production from ethanol,” Appl. Catal. A Gen., vol. 518, pp. 198–205,
May 2016.
[56] D. F. Sanchez, R. Moiraghi, F. P. Cometto, M. A. Pérez, P. F. P. Fichtner, and P. L.
Grande, “Morphological and compositional characteristics of bimetallic
core@shell nanoparticles revealed by MEIS,” Appl. Surf. Sci., vol. 330, pp. 164–
171, Mar. 2015.
[57] D. Schafer et al., “Antiparallel interface coupling evidenced by negative rotatable
anisotropy in IrMn/NiFe bilayers,” J. Appl. Phys., vol. 117, no. 21, p. 215301,
Jun. 2015.
[58] J. Soares Neto et al., “Surface Water Impacted by Rural Activities Induces
Genetic Toxicity Related to Recombinagenic Events in Vivo,” Int. J. Environ.
Res. Public Health, vol. 13, no. 8, p. 827, Aug. 2016.
[59] G. V. Soares, T. O. Feijó, I. J. R. Baumvol, C. Aguzzoli, C. Krug, and C. Radtke,
“Thermally-driven H interaction with HfO2 films deposited on Ge(100) and
Si(100),” Appl. Phys. Lett., vol. 104, no. 4, p. 42901, Jan. 2014.
[60] P. A. Sobocinski, P. L. Grande, and P. Pureur, “Fluctuation conductivity and the
chiral glass state in disordered,” Phys. C Supercond. its Appl., vol. 517, pp. 49–
52, Oct. 2015.
[61] M. A. Sortica, B. Canut, M. Hatori, J. F. Dias, N. Chauvin, and O. Marty, “Optical
and structural properties of InAs nanoclusters in crystalline Si obtained through
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sequential ion implantation and RTA,” Phys. status solidi, vol. 212, no. 12, pp.
2686–2691, Dec. 2015.
[62] V. S. Souza et al., “Hybrid tantalum oxide nanoparticles from the hydrolysis of
imidazolium tantalate ionic liquids: efficient catalysts for hydrogen generation
from ethanol/water solutions,” J. Mater. Chem. A, vol. 4, no. 19, pp. 7469–7475,
2016.
[63] E. M. Stori, C. T. de Souza, and J. F. Dias, “Fabrication and analysis of polymer
microstructures through ion microprobe techniques,” J. Appl. Polym. Sci., vol.
133, no. 14, p. n/a-n/a, Apr. 2016.
[64] D. S. Trentin et al., “N2/H2 plasma surface modifications of polystyrene inhibit
the adhesion of multidrug resistant bacteria,” Surf. Coatings Technol., vol. 245,
pp. 84–91, Apr. 2014.
[65] D. S. Trentin et al., “Natural Green Coating Inhibits Adhesion of Clinically
Important Bacteria,” Sci. Rep., vol. 5, p. 8287, Feb. 2015.
[66] J. Treter, F. Bonatto, C. Krug, G. V. Soares, I. J. R. Baumvol, and A. J. Macedo,
“Washing-resistant surfactant coated surface is able to inhibit pathogenic bacteria
adhesion,” Appl. Surf. Sci., vol. 303, pp. 147–154, Jun. 2014.
[67] A. Valim de Souza, T. Pacheco Soares, C. Alejandro Figueroa, and C. Aguzzoli,
“Redução de Oxigênio por Limpeza à Plasma na Implantação a baixa energia de
Íons de Prata sobre Titânio,” Sci. cum Ind., vol. 3, no. 1, pp. 12–16, May 2015.
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[68] M. Vos and P. L. Grande, “High-energy electron scattering from TiO2 surfaces,”
Nucl. Instruments Methods Phys. Res. Sect. B Beam Interact. with Mater. Atoms,
vol. 354, pp. 332–339, Jul. 2015.
[69] M. Vos, X. Liu, P. L. Grande, S. K. Nandi, D. K. Venkatachalam, and R. G.
Elliman, “The use of electron Rutherford backscattering to characterize novel
electronic materials as illustrated by a case study of sputter-deposited NbOx
films,” Nucl. Instruments Methods Phys. Res. Sect. B Beam Interact. with Mater.
Atoms, vol. 340, pp. 58–62, Dec. 2014.
[70] M. Vos, G. G. Marmitt, and P. L. Grande, “A comparison of ERBS spectra of
compounds with Monte Carlo simulations,” Surf. Interface Anal., vol. 48, no. 7,
pp. 415–421, Jul. 2016.
[71] A. Weilhard et al., “Challenging Thermodynamics: Hydrogenation of Benzene to
1,3-Cyclohexadiene by Ru@Pt Nanoparticles,” ChemCatChem, Nov. 2016.
[72] L. M. Zhang, R. C. Fadanelli, P. Hu, J. T. Zhao, T. S. Wang, and C. H. Zhang,
“Structural damage in InGaN induced by MeV heavy ion irradiation,” Nucl.
Instruments Methods Phys. Res. Sect. B Beam Interact. with Mater. Atoms, vol.
356–357, pp. 53–56, Aug. 2015.
[73] L. M. Zhang et al., “Microstructural response of InGaN to swift heavy ion
irradiation”, Nucl. Instruments Methods Phys. Res. Sect. B Beam Interact. with
Mater. Atoms, vol. 388, pp. 30–34, Dec. 2016.
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Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
[74] M. R. de Souza et al., “Evaluation of the genotoxic potential of soil contaminated
with mineral coal tailings on snail Helix aspersa”, Chemosphere, vol. 139, pp
512-517, 2015.
[75] C. A. Matzenbacher et al., “DNA damage induced by coal dust, fly and bottom
ash from coal combustion evaluated using the micronucleus test and comet assay
in vitro”, Journal of Hazardous Materials, vol. 324, pp 781-788, 2017.
[76] R. F. de Jesus et al., “Magneto-transport properties of As-implanted highly
oriented pyrolytic graphite”, Physica B, vol. 500, pp 118-125, 2016.
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Ion Implantation Laboratory Institute of Physics – UFRGS
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Report
Conference Proceedings
1) G.V.Soares, J.M. Wofford, J.M.J. Lopes, H. Riechert. "Towards the large-area
growth of pgrahene on dielectrics using molecular beam epitaxy" In: Graphene Week,
2015, Manchester.
2) G.V.Soares, J.M. Wofford, J.M.J. Lopes, H. Riechert. "Boron-doped graphene grown
by molecular beam epitaxy". In: MRS Fall Meeting, 2016, Boston.
3) Kaufman I. ; M.B. Pereira ; Boudinov, H. . Apparent Schottky Barrier Height of MIS
Ni/SiC diodes. In: 30th Symposium on Microelectronics Technology and Devices,
Salvador. Chip in Bahia, 2015.
4) M. Adam ; Coelho, A. V. P. ; M.B. Pereira ; Boudinov, H. . Reactive Sputtering of
SixNy for MONOS Memory Fabrication. In: 30th Symposium on Microelectronics
Technology and Devices, Salvador. Chip in Bahia, 2015.
5) G. Sombrio ; Rodrigues, F. S. ; P. Franzen ; Soave, P. A. ; Boudinov, H. . Photo and
Electroluminescence Photo and Electroluminescence from SiNx Layer. In: 30th
Symposium on Microelectronics Technology and Devices, Salvador. Chip in Bahia,
2015.
6) C. Lisevski ; Cauduro A. ; P. Franzen ; Baptista D. ; Boudinov, H. . Engineering of
the photoluminescence of ZnO nanowires by different growth and annealing
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Ion Implantation Laboratory Institute of Physics – UFRGS
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Report
environments. In: 30th Symposium on Microelectronics Technology and Devices,
Salvador. Chip in Bahia, 2015.
7) Lisevski, C. ; Cauduro, A. ; Franzen, P. ; Baptista D. ; Boudinov, H. . Electrical and
Optical Behavior of ZnO Nanowires Irradiated by Ion Beam. In: 30th Symposium on
Microelectronics Technology and Devices, Salvador. Chip in Bahia, 2015.
8) Etcheverry, L. P. ; Rodembusch, F. ; Boudinov, H. ; Gundel, A. ; Moreira, E. C. .
Photoactive Thin Films Based on Benzoxazole Derivatives. In: 30th Symposium on
Microelectronics Technology and Devices, Salvador. Chip in Bahia, 2015.
9) Rodrigues, F. S. ; Sombrio, G ; Franzen, P. L. ; Boudinov, H. . Electrical
Characterization of Non-Stoichiometric Silicon Nitride Films for Electroluminescent
Applications. In: 29th South Symposium of Microelectronics, Alegrete, RS. Brasil.
Proceedings of 29th SIM, 2014.
10) Reis, R.M.S dos ; C. Lisevski ; Franzen, P. ; Baptista D. ; Boudinov, H. . Tailoring
the Optical Characteristic of ZnO Nanowires by Using Different Substrates. In: MRS
Spring Meeting, San Francisco, California, 2015.
11) Garcia, I.T.S.; da Costa, N. B. D. ; Pires, G. H. ; Moreira, E.C. ; Sombrio, G. ;
Boudinov, H. . Tungsten oxide thin films obtained by anodizing: structure and
photoluminescent properties. In: XIV Brazil MRS Meeting, 2015, Rio de Janeiro, 2015.
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Ion Implantation Laboratory Institute of Physics – UFRGS
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Report
12) Leite, G. ; Boudinov, H. . Changing optical and electrical properties of ITO by ion
bombardment. In: XIV Brazil MRS Meeting, 2015, Rio de Janeiro. XIV Brazil MRS
Meeting – 2015.
13) Gorgeski, A.; Castegnaro, M. V.; Bernardi, F. and Morais, J. Characterization of Pt
x Pd x-1 /SiO 2 (x = 1, 0.7 or 0.3) nanoparticles by in-situ XAS, Recent developments
in synchroton radiation. 2015. p. 90, São Paulo School of Advanced Sciences
(SyncLight 2015), Campinas, SP.
14) Gorgeski, M. V. Castegnaro, F. Bernardi, M. C. M. Alves and J. Morais; The
support influence on PtxPd1-x/SiO2 (x = 1, 0.7 or 0.3) nanoparticles reactivity; The
LNLS 26th Annual Users’ Meeting (RAU) p. 25, August 24th to 25th, 2016,
LNLS/CNPEM, Campinas, SP.
15) Castegnaro, M.V., A. Gorgeski, B. Balke, M.C.M. Alves and J. Morais; Charge
transfer effects in the chemical reactivity of PdxCu1-x nanoalloys; The LNLS 26th
Annual Users’ Meeting (RAU)p.68,, August 24th to 25th, 2016, LNLS/CNPEM,
Campinas, SP.
16) Pitthan, E.; Corrêa, S. A.; Soares, G. V.; Boudinov, H. I.; Stedile, F. C.;
“Estructuras SiO2/SiC tratadas termicamente em D218O: efectos composicionales y
eléctricos”, LVIII Congreso Nacional de Física y Congreso Latinoamericano de Física,
Mérida, Yucatán, México, outubro de 2015, p.106.
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Ion Implantation Laboratory Institute of Physics – UFRGS
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Biennial
Report
17) Pitthan, E.; Gobbi, A.L.; Stedile. F. C.; “Phosphorus quantification by 31P(?,p)34S
nuclear reaction in phosphorous contaiming films”, 22nd International Conference on
Ion Beam Analysis – IBA22, Opatija, Croácia, junho de 2015, p. 213.
18) Paixão, P.V.; Stedile, F. C.; Gonzalez, J.C.; Santos, V.F.; Souza, G.G.B.;
“Rutherford Backscattering Spectrometry and X-Ray Fluorescence as probes to
determine trace elements in hair samples”, 22nd International Conference on Ion Beam
Analysis – IBA22, Opatija, Croácia, junho de 2015, p. 127-128.
19) Caceres, J.; Salles, R.; Mello, M.; Silva, G.; Cardoso, S.; Stedile, F. C.; Martins, D.;
Santos, V.N.C.; Alves, S.F.; Nunez, C.; Souza, G.G.B.; “Use of Ion beam (RBS) and X-
Ray techniques (XRF, NEXAFS) in the elemental characterization and chemical
speciation of Amazonian plants”, 22nd International Conference on Ion Beam Analysis
– IBA22, Opatija, Croácia, junho de 2015, p. 128-129.
20) Corrêa, S.A.; Treviso, Alex; Stedile,F.C.; “Semiconductors surface preparation for
atomic layer deposition of high-k dielectric”, Proceedings of the XV Brazilian MRS
(Materials Research Society) Meeting, Campinas (SP), setembro de 2016.
21) Stedile, F. C.; Pitthan, E.; Corrêa, S. A.; Soares, G. V.; “Interaction of water vapor
isotopically enriched (D218O) with silicon dioxide films on Si and on SiC substrates”,
XXXVII Encontro Nacional de Física da Matéria Condensada, Costa do Sauípe (BA),
maio de 2014, pág. 55.
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Laboratório de Implantação Iônica Instituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
Report
Books and book chapters
1) Encontro Sul-Americano de Colisões Inelásticas na Matéria (7. : 2014 :
Gramado, RS).
Autores: Raul Carlos Fadanelli Filho, Pedro Luis Grande.
Ano: 2014.
Editora: UFRGS - Instituto de Física.
Modo de acesso: http://www.if.ufrgs.br/~grande/VIIESCIM.pdf
ISBN: 978-85-64948-12-9
Oral contributions and invited talks
1) Gabriel Vieira Soares: MRS Fall Meeting, Boston, EUA (nov. 2016). Oral
presentation.
2) Moni Behar VIII Taller de colisiones inelásticas en la materia, 2016, Mexico.
3) Moni Behar, A tendency from Atomic to Nuclear Physics Atlanta USA 2016
4) Ivan Kaufman, 30th Symposium on Microelectronics Technology and Devices,
2015, Salvador, Oral presentation
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Laboratório de Implantação IônicaInstituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
2015/16
Biennial
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5) Henri Boudinov, 30th Symposium on Microelectronics Technology and Devices,
2015, Salvador, Oral presentation
6) Guilherme Sombrio, 30th Symposium on Microelectronics Technology and Devices,
2015, Salvador, Oral presentation
7) Caroline Lisevski, 30th Symposium on Microelectronics Technology and Devices,
2015, Salvador, Oral presentation
8) Frâncio Rodrigues, 29th South Symposium of Microelectronics 2014, Alegrete, RS,
Brasil. Oral presentation
9) Roberto dos Reis, MRS Spring Meeting, 2015, San Francisco, California. Oral
presentation
10) Raquel Giulian, EMRS Spring Meeting, 2016, Lille - France. Invited Talk
11) Pedro Luis Grande, Invited Lectures on High Sensitivity 2D & 3D Characterization
and Imaging with Ion Beams, Joint ICTP-IAEA Advanced Workshop, 26 - 30
September 2016, ICTP, Trieste, Italy
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Laboratório de Implantação Iônica Instituto de Física – UFRGS
Ion Implantation Laboratory Institute of Physics – UFRGS
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12) Pedro Luis Grande, oral contribution, 8th International Workshop on High
Resolution Depth Profiling.On the use of MEIS cartography for the determination of
Si1-xGex thin-film strain, 2016, London, Canada.
13) Pedro Luis Grande, Invited talk, 16th Japanese Symposium on Surface and
Interface Analysis with Ion Beam.Exploring alternative methods for characterization of
thin films and nanostructures. 2015, Nara, Japan.
14) Pedro Luis Grande, Oral contribution, 22nd International Conference on Ion Beam
Analysis. Neutralization and wake effects on the Coulomb explosion depth profiling.
2015, Opajia, Croacia.
15) Pedro Luis Grande,VIII Taller de colisiones inelásticas en la materia, 2016,
Mexico.
16) Johnny Ferraz Dias. International Conference on Particle-Induced X-ray Emission
(PIXE 2015) - Cidade do Cabo, Africa do Sul (2015). Radioactivity in Brazil: from
Myth to Facts (Invited Talk).
17) Johnny Ferraz Dias. 2 Small Workshop on Remediation Technology for Fukushima
Nuclear Disaster - Sendai, Japão (2016). The Nuclear Accidents of Juarez (Mexico) and
Goiania (Brazil) (Invited Talk).
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18) Fernanda Chiarello Stedile: “Desvendando a incorporação de água em estruturas
dióxido de silício / carbeto de silício usando reações nucleares”, Programa de Pós-
Graduação em Microeletrônica da UFRGS, setembro de 2016. Invited Talk
19) Fernanda Chiarello Stedile: “A Química Nuclear e suas Aplicações” na VII Semana
Científico-Tecnológica - VII SEMACIT-IFRJ – Campus Duque de Caxias, 6h-aula,
novembro de 2015. Invited Course
20) Fernanda Chiarello Stedile: “Análise elementar de alta sensibilidade utilizando
feixes de íons: fundamentos e aplicações da técnica RBS (Rutherford Backscattering
Spectrometry)”, Programa de Pós-Graduação em Química da UFRJ, agosto de 2015.
Invited Talk.
20) Fernanda Chiarello Stedile: “Investigação do transporte atômico em materiais
utilizando traçadores isotópicos e reações nucleares”, Laboratório do Acelerador van de
Graaff do Departamento de Física da PUC-Rio, abril de 2014. Invited Talk.
21) Fernanda Chiarello Stedile: “Investigação do transporte atômico em materiais
utilizando traçadores isotópicos e reações nucleares”, Laboratório de Colisões
Atômicas e Moleculares do Instituto de Física da UFRJ, abril de 2014. Invited Talk.
22) Daniel L. Baptista: "Fabrication of 2D Nanomaterials for Sensing Applications",
Workshop em Sistemas Micro-Nanoestruturados: Aplicações (Bio)Ópticas e
Multifuncionais, Porto Alegre, RS, 2015. Oral contribution.
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23) Daniel L. Baptista: "Point-defect Migration in ZnO Semiconductor Nanowires",
XV B-MRS, Búzios, RJ, 2015. Invited talk.
24) Agenor Hentz: "Structural Changes in Quantum-Dots Core-Shell CdSe/ZnS by
Thermal Treatment", 22nd International Conference on Ion Beam Analysis, Opatia,
Croacia, 2015. Oral contribution.
25) Igor Alencar: "Radiation effects in ionic crystals: To create or not to create metallic
colloids?", International Conference on Processing and Manufacturing of Advanced
Materials, Graz, Áustria, 2016. Invited talk.
26) Igor Alencar: "Characterization of nanoparticles emitted by electronic sputtering of
CaF2", European Materials Research Society Spring Meeting, Lille, França, 2016. Oral
contribution.
27) Igor Alencar: "Compositional depth profile investigation of plasma doped
Si/SiO2:As by Medium-Energy Ion Scattering", 8th International Workshop on High-
Resolution Depth Profiling, London, Canadá, 2016. Oral contribution.
28) Igor Alencar: "Time-of-Flight Secondary Ion Mass Spectrometry beamline at the
Ion Implantation Laboratory: Current status and perspectives", XIII Workshop em
Física Molecular e Espectroscopia, Rio de Janeiro, Brasil, 2016. Oral contribution.
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29) Paulo F. P. Fichtner, invited talk, XXXXVIII Reunião de Trabalho sobre Física
Nuclear no Brasil, 4-11 September 2015, Mangaratiba, RJ, Brazil (on the stability of
nanoclusters and nanoparticles embedded in dielectric substrates)
30) Paulo F. P. Fichtner, invited talk, International Nuclear Atlantic Conference, 4-9
October 2015, São Paulo, SP, Brazil (On the use of energetic ions and electrons for
defect engineering and radiation damage studies)
31) Paulo F. P. Fichtner, invited talk, XV Brazilian MRS Meeting, 25-29 September
2016, Campinas, SP, Brazil (electron irradiation effects on the structural stability of
nano objects)
32) Paulo F. P. Fichtner, oral contribution, Ion Beam Modification of Materials,
30/October - 4/November 2016, Wellington, New Zealand (Inert gas effects on the
precipitation process in austenitic alloys irradiated with heavy ions)
33) Gabriel G. Marmitt, oral contribution, XIV Encontro da SBPMat, 27/09 – 01/10
2015, Rio de Janeiro, RJ, Brasil, (The use of ERBS for thin film thickness
measurements and the study of O diffusion in TiO2 films)
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34) Gabriel G. Marmitt, oral contribution, 8th International Workshop on High-
Resolution Depth Profiling, 7 à-11/08 2016, London, Ontario, Canada, (Application of
ERBS analysis on O diffusion in TiO 2 films)
35) Gabriel G. Marmitt, oral contribution, VIII Taller de colisiones inelásticas en la
materia, 11 – 14/12 2016, Playa del Carmen, Quintana Roo, México, (Diffusion in
TiO2 films studied by electron- and ion-RBS)
36) Masahiro Hatori, oral contribution, VIII Taller de colisiones inelásticas en la
materia, 11 – 14/12 2016, Playa del Carmen, Quintana Roo, México, (Synthesis of InAs
nanoprecipitates by low energy ion implantation and rapid thermal annealing (RTA))
37) Ricardo Meurer Papaléo, oral contribution, 27th International Conference on
Atomic Collisions in Solids (ICACS 27), 2016, Lanzhou, China, (Confinement effects
of ion tracks in ultrathin polymer films)
38) Ricardo Meurer Papaléo, oral contribution, 27th International conference on
atomic collisions in solids (ICACS-27), 2016, Lanzhou, China, (Modification of
polymers by high-energy ions: from single events to macroscopic effects)
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39) Ricardo Meurer Papaléo, oral contribution, 12th Meeting of the Ionizing Radiation
and Polymers Symposium, 2016, Peninsula of Giens, France, (Ion Irradiation of
polymer thin and ultrathin films: effects of spatial confinement in one dimension)
40) Ricardo Meurer Papaléo, oral contribution, 2nd Brazil-Turkey Nanotechnology
Workshop, 2015, Santo André, SP, Brazil, (Nanoscience and nanotechology at PUCRS :
A brief overview)
41) Ricardo Meurer Papaléo, oral contribution, XXXIX National Meeting on
Condensed Matter Physics, 2016, Natal, RN, Brazil, (Functionalized Iron Oxide
Nanoparticles as Contrast Agents for Multimodall Biomedical Imaging.)
42) Ricardo Meurer Papaléo, oral contribution, VII Taller de Colisiones Inelásticas en
la Materia, 2016, Playa del Carmen, Quintana Roo, México, (On the radiolytic
efficiency of high-energy ions confined in ultrathin polymer films.)
43) Ricardo Meurer Papaléo, oral contribution, Brazil-Sweden Excellence Seminar,
2016, Brasilia, DF, Brazil, (Multifunctional nanoparticles for biomedical applications)
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Supervision of thesis and dissertations (completed)
1) Gabriel Volkweis Leite, Dissertation (2015) "Controle das características elétricas e
ópticas do ITO através de bombardeamento com íons." Supervisor: Henri Boudinov.
2) Louise Etcheverry, Dissertation (2016) "Compostos fotoativos derivados de
benzazolas: uma abordagem teórico-experimental para aplicação em dispositivos
orgânicos emissores de luz.", Supervisor: Henri Boudinov and Eduardo Ceretta.
3) Caroline Lisevski, PhD Theses (2015) "Propriedades Optoeletrônicas de Nanofios de
ZnO.", Supervisor: Daniel Lorscheitter Baptista and Henri Boudinov.
4) Guilherme Sombrio, PhD Theses (2016) "Estudo de Eletroluminescência de Nitreto
de Silício Não-Estequiométrico Depositado por Sputtering Reativo.", Supervisor: Henri
Boudinov and Paulo Franzen.
5) Tiago Silva da Ávila. Uso da técnica de cartografia-MEIS para a determinação da
deformação no parâmetro de rede em filmes finos. 2016. Tese (Doutorado em Física) -
Universidade Federal do Rio Grande do Sul, Coordenação de Aperfeiçoamento de
Pessoal de Nível Superior. Orientador: Pedro Luis Grande.
6) Lúcio Flávio dos Santos Rosa. Neutralização e efeitos de força de arrasto em filmes
ultrafinos de TiO2 e Al2O3. 2015. Tese (Doutorado em Física) - Universidade Federal
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do Rio Grande do Sul, Conselho Nacional de Desenvolvimento Científico e
Tecnológico. Orientador: Pedro Luis Grande.
7) Anaí Duarte. Caracterização Elementar de Resíduos de Disparo de Arma de Fogo
Gerados por Munição de Fabricação Brasileira. Tese de Doutorado em Ciência dos
Materiais - 2014. CAPES. Orientador: Johnny Ferraz Dias.
8) Gabriela Copetti. Estabilidade de filmes de GeOxNy crescidos termicamente sobre
Ge. 2015. Dissertação (Mestrado em Programa de Pós Graduação em Física) -
Universidade Federal do Rio Grande do Sul, Conselho Nacional de Desenvolvimento
Científico e Tecnológico. Orientador: Cláudio Radtke.
9) Nicolau Molina Bom. Processamento físico-químico de semicondutores com alta-
mobilidade de portadores: germânio e grafeno. 2015. Tese (Doutorado em
Microeletrônica) - Universidade Federal do Rio Grande do Sul, Coordenação de
Aperfeiçoamento de Pessoal de Nível Superior. Orientador: Cláudio Radtke.
10) João Wagner Lopes de Oliveira. Síntese hidrotérmica de nanoestruturas de ZnO
impregnadas com ouro ou prata para fotogeração de hidrogênio. 2015. Doutorado.
Programa de Pós-graduação em Microeletrônica. Orientador: Daniel L. Baptista.
11) Luiz Henrique Acauan. Síntese de estruturas 3D de nanotubos de carbono
verticalmente alinhados, dopados e não-dopados, decorados com nanopartículas de
óxido de titânio, sua caracterização microestrutural e de propriedades fotocatalíticas e
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elétricas. 2015. Doutorado. Programa de Pós-graduação em Engenharia de Minas,
Metalúrgica e de Materiais. Orientadores: Carlos Pérez Bergmann e Daniel L. Baptista.
12) Cristiana Marin, Thesis 2016) “Estabilidade térmica de nanoaglomerados metálicos
em dielétricos”. Supervisor: Paulo F. P. Fichtner
13) Mariana de Mello Timm, Dissertation (2015) “Efeitos da Irradiação de Elétrons
sobre a formação e estabilidade térmica de nanopartículas de Au em filmes de Si3N4“.
Supervisor: Paulo F. P. Fichtner
Patent
1) Depósito de pedido ao INPI - Instituto Nacional da Propriedade Industrial. Número
do registro: PI 0702638-2. Depositante: UCS. Título da Invenção: Processo para
Remoção de Metais Pesados de Líquidos Contaminados. Inventores: A. J. P. Dillon, J.
F. Dias, M. L. Yoneama, S. M. da Silva, L. O. da Rosa. 2015
Organization of conferences
1) Encontro Sudamericano de Colisiones Inelásticas conjuntamente com P.L. Grande e
J.F. Dias, Gramado Brasil 2014.
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2) Simpósio "Advanced and Analytical Microscopy and Spectroscopy of
Nanostructures and Engineering Materials", coordenado por Daniel L. Baptista e
Guillermo Solorzano no XV B-MRS, Campinas, Brasil, 2016.
3) IX Congresso Brasileiro de Microscopia dos Materiais - MICROMAT, organizado
por Daniel L. Baptista e Karla Balzuweit, Belo Horizonte, Brasil, 2016.
Members in international committees and in
editorial boards of scientific journals
1) Fernanda Chiarello Stedile - Member of the international committee of the
International Conference on Ion Beam Analysis (IBA)
2) Moni Behar, Radiation Effects on Insulators. Member of the IC.
3) Moni Behar, Member of the IC of the Encontros Sudamericanos de Colisiones
Inelasticas da Materia.
4) Moni Behar, member of the IC of the Conference of Radiation Effects on the Matter
(REM).
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4) Johnny Ferraz Dias – Member of the IC of the International Conference on Particles
– Induced X-Rays Spectrometry.
5) Johnny Ferraz Dias – Member of the IC of the International Symposium on
BioPIXE.
Partners (Universities, Research Institutes and Companies)
1) CAPES/MES, Cuba 2012/2016.
2) CAPES/FCT, Portugal 2014/2015.
Projects
PRONEX
INCT-INES
Nanobiotec
INCT-Namitec
PNPD-CAPES
R-NANO, PETROBRAS
CNPq
PqG-FAPERGS
IAEA
Humboldt Return Fellowship
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Laboratório de Implantação Iônica
Instituto de FísicaUniversidade Federal do Rio Grande do Sul
Av. Bento Gonçalves 950091501-970, Porto Alegre – RS, BrasilPhone +55 51 33087004 Fax +55 51 33087296http://implantador.if.ufrgs.br